Heavily P-Doped (>10^<21> cm<-3>) Silicon Films Grown by Photochemical Vapor Deposition at a Very Low Temperature of 250℃
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-12-20
著者
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YAMADA Akira
Departments of Immunology, Kurume University School of Medicine
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Takahashi K
Department Of Physical Electronics Tokyo Institute Of Technology
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山田 晃
東京農工大学生物システム応用科学府
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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Yamada Akira
Department Of Cardiology Aso-iizuka Hospital
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TAKAHASHI Kiyoshi
Department of Medicine, National Minami-Okayama Hospital
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JIA Ying
School of Pharmacy, Shenyang Pharmaceutical University
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Takahashi Kiyoshi
Department Of Internal Medicine Ii Okayama University Graduate School Of Medicine And Dentistry
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JIA Ying
Department of Physical Electronics, Tokyo Institute of Technology O-okayama
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Takahashi K
Tokyo Inst. Technol. Yokohama Jpn
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Takahashi Kouchiro
National Institute For Research In Inorganic Materials
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Jia Ying
School Of Pharmacy Shenyang Pharmaceutical University
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
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JIA Ying
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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