Room Temperature Operation of Amorphous Carbon-Based Single-Electron Transistors Fabricated by Beam-Induced Deposition Techniques
スポンサーリンク
概要
- 論文の詳細を見る
Single-electron transistors (SETs) were directly fabricated using scanning electron microscopy (SEM) and a focused ion beam (FIB) system. Amorphous carbon microstructures were modified to the source, drain electrodes and the capacitive island using SEM. The gate electrode consisting of tungsten carbide deposited by FIB was also supplemented. Namely, microscopic tunnel junctions were prepared by beam-induced reaction processes, which are simple and unique techniques for microfabrication. At room temperature, a Coulomb staircase and Coulomb blockade oscillation were successfully recorded, and this beam-induced method was confirmed to be one of the practical processes for realizing SETs.
- 社団法人応用物理学会の論文
- 1998-04-01
著者
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YAMADA Akira
Departments of Immunology, Kurume University School of Medicine
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山田 晃
東京農工大学生物システム応用科学府
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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Yamada Akira
Department Of Cardiology Aso-iizuka Hospital
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Miura N
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
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SHIRAKASHI Jun-ichi
Electrical and Electronic System Engineering, Tokyo University of Agriculture and Technology
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Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
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Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Konagai M
Department Of Physical Electronics Tokyo Institute Of Technology
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Miura N
Advanced Technology R&d Center Mitsubishi Electric Corporation
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MIURA Naruhisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Teclnohogy
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Shirakashi Junichi
Electrotechnical Laboratory
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NUMAGUCHI Tetsuyuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Shirakashi Jun-ichi
Electrotechnical Laboratory
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Numaguchi Tetsuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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