Konagai M | Department Of Physical Electronics Tokyo Institute Of Technology
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概要
関連著者
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Konagai M
Department Of Physical Electronics Tokyo Institute Of Technology
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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山田 晃
東京農工大学生物システム応用科学府
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Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
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KONAGAI Makoto
Tokyo Institute of Technology
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YAMADA Akira
Departments of Immunology, Kurume University School of Medicine
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Yamada Akira
Department Of Cardiology Aso-iizuka Hospital
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山田 晃
東京農工大学生物システム応用科学研究科
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山田 明
東京工業大学大学院理工学研究科電子物理工学専攻
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Yamada Akira
Frontier Research Program The Institute Of Physical And Chemical Research (riken)
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Konagai M
Tokyo Inst. Technol. Tokyo Jpn
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Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Miura N
Advanced Technology R&d Center Mitsubishi Electric Corporation
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山田 晃
農工大院
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MIYAJIMA Shinsuke
Department of Physical Electronics, Tokyo Institute of Technology
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Shirakashi Junichi
Electrotechnical Laboratory
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OKAMOTO Tamotsu
Tokyo Institute of Technology
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Ohtsuka Tomohiko
Department Of Physical Electronics Tokyo Institute Of Technology
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Miura N
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
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Okamoto T
Keio Univ. Yokohama Jpn
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Okamoto Toshiyuki
Department Of Applied Science Faculty Of Engineering Kyushu University:(present Address)alps Denki C
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YAMADA Akira
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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YAMADA Akira
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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SHIRAKASHI Jun-ichi
Electrical and Electronic System Engineering, Tokyo University of Agriculture and Technology
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ABE Katsuya
Department of Physical Electronics, Tokyo Institute of Technology
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Abe K
Mitsubishi Materials Corporation Central Research Institute
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Abe Katsuya
Department Of Applied Chemistry Faculty Of Engineering Kogakuin University
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Konagai Makoto
Tokyo Inst. Technol. Tokyo Jpn
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MIURA Naruhisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Teclnohogy
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CHAISITSAK Sutichai
Department of Physical Electronics, Tokyo Institute of Technology
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Takahashi K
National Inst. Res. In Inorganic Materials Ibaraki Jpn
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TAKAHASHI Kiyoshi
Department of Medicine, National Minami-Okayama Hospital
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Takahashi Kiyoshi
Department Of Internal Medicine Ii Okayama University Graduate School Of Medicine And Dentistry
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Matsumoto K
Electrotechnical Lab. Ibaraki‐kenn Jpn
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Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
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Matsumoto Kazuhiko
Advanced Industrial Science And Technology:tsukuba University:crest
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Takahashi K
Department Of Physical Electronics Tokyo Institute Of Tecnology
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Takahashi K
Tokyo Inst. Technol. Yokohama Jpn
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MIURA Naruhisa
Tokyo Institute of Technology
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Takahashi Kuniharu
Graduate School Of Science And Technology Niigata University
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Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
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Matsumoto Kazuhisa
Sumitomo Electric Industries Ltd.
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Takahashi Kouchiro
National Institute For Research In Inorganic Materials
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Chaisitsak Sutichai
Department Of Physical Electronics Tokyo Institute Of Technology
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Takahashi K
Department Of Physical Electronics Tokyo Institute Of Technology
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OKAMOTO Tamotsu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Matsumoto K
Nippon Sanso Corp. Ibaraki Jpn
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Matsumoto K
Advanced Industrial Science And Technology:tsukuba University:crest
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YAGI Shuhei
Department of Physical Electronics, Tokyo Institute of Technology
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Yagi S
Department Of Physical Electronics Tokyo Institute Of Technology
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Yagi Syuhei
Department Of Physical Electronics Tokyo Institute Of Technology
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Oshima Takayuki
Department Of Physical Electronics Tokyo Institute Of Technology
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IDE Yoshinori
Department of Physical Electronics, Tokyo Institute of Technology
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Yagi Shin-ichi
Department Of Physical Electronics Tokyo Institute Of Technology
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Matsumoto Koh
Tsukuba Laboratories Nippon Sanso Corporation
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Yagi S
Meisei Univ. Tokyo Jpn
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AMIN Nowshad
Department of Electrical and Electronic Engineering. Tokyo Institute of Technology
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OKABAYASHI Takashi
Department of Physical Electronics, Tokyo Institute of Technology
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OKAMOTO Tamotsu
Department of Physical Electronics, Tokyo Institute of Technology
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ICHIKAWA Mitsuru
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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SHIMIZU Akira
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Yamada Akira
Biological Ict Group National Institute Of Information And Communications Technology
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Sang Baosheng
Department of Electrical & Electric Engineering, Tokyo Institute of Technology
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Dairiki Koji
Department of Electrical & Electric Engineering, Tokyo Institute of Technology
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Dairiki Koji
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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OHTAKE Yasutoshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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TAKAHASHI Kaoru
Department of Applied Physics, Tokyo University of Agriculture and Technology
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Yagi Shuhei
Department Of Physical Electronics Tokyo Institute Of Technology
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KUSHIYA Katsumi
Showa Shell Sekiyu K.K. Central R&D Lab.
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Okamoto Tamotsu
Department Of Electrical And Electronics Engineering Chiba University
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Ishida M
Sii Nanotechnology Inc.
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山田 晃
東京農工大学大学院生物システム応用科学研究科
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Takahashi Kensuke
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C
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Takahashi Kazuhiko
National Research Institute For Metals Tsukuba Laboratories:sanyo Elect. Co. Ltd.
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Ichikawa Mitsuru
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Shimizu A
Department Of Electrical And Electronic Engineering Faculty Of Engineering University Of Yamanashi
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IWASA Masayuki
SII Nanotechnology Inc.
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Ohtake Yasutoshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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山田 晃
東京農工大学大学院生物システム応用科学教育部
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WATAHIKI Tatsuro
Department of Physical Electronics, Tokyo Institute of Technology
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MIYAZAKI Hisashi
Department of Physical Electronics, Tokyo Institute of Technology
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MIKAMI Rui
Department of Physical Electronics, Tokyo Institute of Technology
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SUGIYAMA Takeshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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ISHII Makoto
Optoelectronics Joint Research Laboratory
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Ishii Masami
Electrotechnical Laboratory
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Nagao K
Univ. Tokyo Tokyo Jpn
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BUDIMAN Maman
Department of Electrical & Electronic Engineering, Tokyo Institute of Technology
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MATSUZAKI Yuichi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Sato K
Depertment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Ishii M
Electrotechnical Laboratory
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Ishii M
Optoelectronics Joint Research Laboratory
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Ishii M
Toyota Central Res. And Dev. Lab. Inc. Aichi Jpn
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Ishii M
Liquid Crystal Lab. Sharp Corp.
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Sato Kuninori
Institute For Fusion Science
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SHIRAKASHI Jun-ichi
Department of Electrical and Electronic System Engineering, Tokyo University of Agriculture and Tech
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Saito Yuji
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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NAGAO Keisuke
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Sato K
Department Of Electronics And Information Science Teikyo University Of Science And Technology
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Matsuzaki Y
Mie Univ. Tsu Jpn
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Ishii M
Central Research Laboratory Nihon Cement Co. Lid.
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Nagao Keisuke
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Ichikawa Masakazu
Joint Research Center For Atom Technology
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Watahiki Tatsuro
Department Of Physical Electronics Tokyo Institute Of Technology
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Saito Yuji
Graduate School Of Engineering Kanto Gakuin University
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Nagao Keisuke
Department Of Applied Physics Faculty Of Science Okayama University Of Science
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HAGA Keisuke
Department of Physical Electronics, Tokyo Institute of Technology
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KUROKAWA Yasuyoshi
Department of Physical Electronics, Tokyo Institute of Technology
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Budiman Maman
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Ishii M
Shonan Inst. Technol. Kanagawa Jpn
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Ishii H
Sci. Univ. Tokyo Chiba‐ken Jpn
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Ishii Hideaki
Department Of Pathology Nippon Medical School Musashikosugi Hospital
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MIYAZONO Nagako
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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ISHIHARA Hanae
Department of Physical Electronics, Tokyo Institute of Technology
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MURANO Masahiko
Department of Physical Electronics, Tokyo Institute of Technology
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TOKITA Yuuki
Department of Physical Electronics, Tokyo Institute of Technology
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YONEYAMA Yuichi
Department of Physical Electronics, Tokyo Institute of Technology
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KOBAYASHI Kensaku
Course of Electrical Engineering, Tokai University
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SANDHU Adarsh
Department of Electrical and Electronic Engineering, Tokai University
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YAMADA Akira
Tokyo Institute of Technology
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OHTSUKA Tomohiko
Department of Physical Electronics, Tokyo Institute of Technology
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YAGI Syuhei
Department of Physical Electronics, Tokyo Institute of Technology
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KUDRIAVTSV Yuriy
Electrical Engineering Department, Center for Research and Advanced Studies
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GODINES Antonio
Electrical Engineering Department, Center for Research and Advanced Studies
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VILLEGAS Antonio
Electrical Engineering Department, Center for Research and Advanced Studies
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ASOMOZA Rene
Electrical Engineering Department, Center for Research and Advanced Studies
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TSUSIMA Takeshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Maruyama Seitaro
First Department Of Internal Medicine Niigata University School Of Medicine
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YAMAMOTO Akio
Department of Applied Chemistry, Graduate School of Science and Engineering, Waseda University
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SAITO Koki
Department of Electronics and Information Science, Teikyo University of Science and Technology
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Isaka Takayuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Sato K
Asahi Glass Co. Ltd. Yokohama Jpn
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Wenas Wilson
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Saito K
Department Of Materials Technology Chiba University
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Sato K
Faculty Of Applied Biological Science Hiroshima University
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Sato K
National Institute For Fusion Science
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Zhao Y
Nankai Univ. Tianjin Chn
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Zhao Ying
Department Of Cardiology Anzhen Hospital Capital Medical University
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HASUI Shigeki
Department of Physical Electronics, Tokyo Institute of Technology
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KAMADA Shin-ya
Department of Physical Electronics, Tokyo Institute of Technology
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KITAMOTO Shinji
Department of Physical Electronics, Tokyo Institute of Technology
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KUSHIYA Katsumi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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SANO Hideki
Department of Physical Electronics, Tokyo Institute of Technology
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Kojima N
Department Of Chemistry Faculty Of Science Kyoto University
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Sato K
National Defense Acad. Yokosuka Jpn
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Sato K
Faculty Of Technology Tokyo Universily Of Agriculture And Technology
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Sano H
Murata Manufacturing Co. Ltd. Kyoto Jpn
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Minagawa Shiroh
Division Of Cardiology Niigata University Graduate School Of Medical And Dental Sciences
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Azuma Toshiaki
Department of Physical Electronics, Tokyo Institute of Tecnology
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Fukuchi Fumihiko
Department of Physical Electronics, Tokyo Institute of Tecnology
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SHIRAHAMA Masanori
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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TOKUMITSU Eisuke
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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KOJIMA Nobuaki
Department of Physical Electronics, Tokyo Institute of Technology
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SATO Kei
Depertment of Electrical and Electronic Engineering, Tokyo Institute of Technology
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KONAGAI Makoto
Depertment of Electrical and Electronic Engineering, Tokyo Institute of Technology
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OSHIMA Takayuki
Department of Physical Electronics, Tokyo Institute of Technology O-okayama
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Matsuzaki Yuichi
Department Of Agricultural And Environmental Biology The University Of Tokyo
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TAKEGAMI Tsuyoshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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MIYASHITA Toshihiko
Department of Physical Electronics, Tokyo Institute of Technology
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Sandhu Adarsh
Department Of Electrical And Electronic Engineering Tokai University
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Miyajima Seiichi
Division Of Internal Medicine Niigata Minami Hospital
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Takegami Tsuyoshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyashita Toshihiko
Department Of Physical Electronics Tokyo Institute Of Technology
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Kudriavtsv Yuriy
Electrical Engineering Department Center For Research And Advanced Studies
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Isaka Takayuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyazaki Hisashi
Department Of Applied Physics Osaka City University
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Sato K
Dept. Of Energy Engineering And Science Nagoya University
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LIMMANEE Amornrat
Department of Physical Electronics, Tokyo Institute of Technology
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OTSUBO Michio
Department of Physical Electronics, Tokyo Institute of Technology
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SATO Takehiko
Material and Processing Technology Department, Advanced Technology R&D Center, Mitsubishi Electric C
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BANERJEE Chandan
Department of Physical Electronics, Tokyo Institute of Technology
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NARAYANAN Kannan
Department of Physical Electronics, Tokyo Institute of Technology
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SRITHARATHIKHUN Jaran
Department of Physical Electronics, Tokyo Institute of Technology
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KAMBE Mika
Department of Physical Electronics, Tokyo Institute of Technology
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SATO Kazuo
Research Center, Asahi Glass Co., Ltd.
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KOBAYASHI Daisuke
Research Center, Asahi Glass Co., Ltd.
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FUKAWA Makoto
Research Center, Asahi Glass Co., Ltd.
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TANEDA Naoki
Research Center, Asahi Glass Co., Ltd.
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KIM Mingyu
Department of Physical Electronics, Tokyo Institute of Technology
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KONAGAI Makoto
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tsusima Takeshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Saito K
Nagaoka National Coll. Technol. Nagaoka Jpn
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Takeshita Jun
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Kambe Mika
Department Of Physical Electronics Tokyo Institute Of Technology
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Villegas Antonio
Electrical Engineering Department Center For Research And Advanced Studies
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Sano H
Japan Advanced Inst. Sci. And Technol. Ishikawa Jpn
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Taneda Naoki
Research Center Asahi Glass Co. Ltd.
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Fukawa Makoto
Research Center Asahi Glass Co. Ltd.
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Ide Yoshinori
Department Of Physical Electronics Tokyo Institute Of Technology
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Azuma Toshiaki
Department Of Physical Electronics Tokyo Institute Of Tecnology
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Ishihara Hanae
Department Of Physical Electronics Tokyo Institute Of Technology
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SANO Haruki
Faculty of Engineering, Shinshu University
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Tokita Yuuki
Department Of Physical Electronics Tokyo Institute Of Technology
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IRIKAWA Junpei
Department of Physical Electronics, Tokyo Institute of Technology
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Asomoza Rene
Electrical Engineering Department Center For Research And Advanced Studies
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Kobayashi Kensaku
Course Of Electrical Engineering Tokai University
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Tokumitsu E
Tokyo Inst. Technol. Yokohama Jpn
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Tokumitsu E
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Fukuchi Fumihiko
Department Of Physical Electronics Tokyo Institute Of Tecnology
著作論文
- Growth of Strain-Relaxed Si_C_y Films with Compositionally Graded Buffer Layers by Gas Source Molecular Beam Epitaxy
- Novel In(OH)_3:Zn^ Buffer Layer for Cu(InGa)Se_2 Based Solar Cells
- Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1-μm-Thick CdTe Thin Film Solar Cells
- Phosphorous Doping of Strain-Induced Si_C_y Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
- Preferred Orientation Control of Cu(In_Ga_x)Se_2 (x≈0.28) Thin Films and Its Influence on Solar Cell Characteristics
- Effect of CdCl_2 Treatment Conditions and Stoichiometry on The Deep Level, Carrier Lifetime and Converstion Efficiency of CdTe Thin Film Solar Cells
- P-Doping into Strain-Induced Si_C_y Epitaxial Films Grown by Low Temperature Chemical Vapor Deposition
- Epitaxial Growth of Si_C_y Film by Low Temperature Chemical vapor Deposition
- Formation of pn Homojunction in Cu(InGa)Se_2 Thin Film Solar Cells by Zn Doping
- Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method
- Improvement of the Electrochemical Profiling Technique of Carrier Concentration in Cu(InGa)Se_2 Thin Film Solar Cells
- High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact
- Improvement of Stabilized Efficiency of Amorphous Silicon Solar Cell by SiH_2Cl_2 Addition
- Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance-Voltage Profiling Technique
- Improvement in Performances of ZnO : B/i-ZnO/Cu(InGa)Se_2 Solar Cells by Surface Treatments for Cu(InGa)Se_2
- Electrical and Structural Characterizations of Cu(InGa)Se_2 Thin Films Using Electrochemical Capacitance-Voltage Method and Focused-Ion Beam Process
- Cu(InGa)Se_2 Thin-film Solar Cells with High Resistivity ZnO Buffer Layers Deposited by Atomic Layer Deposition
- Prospects of Thickness Reduction of the CdTe Layer in Highly Efficient CdTe Solar Cells Towards 1 μm
- Molecular Beam Epitaxy and Characterization of Layered In_2Se_3 Films Grown on Slightly Misoriented (001)GaAs Substrates
- Heteroepitaxy and Multiquantum Well Structure of Layered Compound GaSe/GaS_xSe_ on (001) GaAs Substrate
- Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence
- Characterizaiton of ZnIn_xSe_y Thin Films as a Buffer Layer for High Efficiency Cu(InGa)Se_2 Thin-Film Solar Cells
- Numerical Analysis to Improve the Stabilized-Efficiency of Amorphous Silicon Solar Cells with New Device Structure
- Efficiency Improvement of Cu(InGa)Se_2 Thin Film Solar Cells with a High Ga Composition Using Rapid Thermal Annealing
- Characterization of Tensile Strained Si_1_yCy Alloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature
- Improvement in Aspect Ratio of P-GaAs Oxide Fabricated by Atomic Force Microscope (AFM)-Based Nanolithography Using Pulsed Voltage
- Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation
- Developmemt of High-Efficiency CuIn_xGa_Se_2 Thin-Film Solar Cells by Selenization with Elemental Se Vapor in Vacuum
- Heteroepitaxy of Layered Compound InSe and InSe/GaSe onto GaAs Substrates
- InGaP/GaAs Heterojunction Bipolar Transistors with an Ultra-High Carbon-Doped Base (p=1.5×10^cm^)
- Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium
- Characterization of Carbon-Doped GaAs Grown by Molecular Beam Epitaxy Using Neopentane as Carbon Source
- Highly Stable ZnO Thin Films by Atomic Layer Deposition
- Textured ZnO Thin Films for Solar Cells Grown by a Two-step Process with the Atomic Layer Deposition Technique
- Polycrystalline Cu(InGa)Se_2 Thin-Film Solar Cells with ZnSe Buffer Layers
- Epitaxial Growth of GaSe Films by Molecular Beam Epitaxy on GaAs(111), (001) and (112) Substrates
- Control of the Arrangement of the Native Gallium Vacancies in Ga_2Se_3 on (100)GaAs by Molecular Beam Epitaxy
- Formation of ZnGa_2Se_4 Epitaxial Layer during Molecular Beam Epitaxial Growth of Ga_2Se_3 on ZnSe
- Metalorganic Chemical Vapor Deposition of ZnO Using D_2O as Oxidant
- Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
- Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures
- Preparation of Hydrogenated Amorphous Silicon Carbon Nitride Films by Hot-Wire Chemical Vapor Deposition Using Hexamethyldisilazane for Silicon Solar Cell Applications
- Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition
- Preparation of Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix
- Low-Temperature Deposition of Highly Conductive n-Type Hydrogenated Nanocrystalline Cubic SiC Films for Solar Cell Applications
- TiO_2-Coated Transparent Conductive Oxide (SnO_2:F) Films Prepared by Atmospheric Pressure Chemical Vapor Deposition with High Durability against Atomic Hydrogen
- Intrinsic Microcrystalline Silicon Thin Films Prepared by Hot-Wire Cell Method and Their Application to Solar Cells
- Properties of Hydrogenated Microcrystalline Cubic Silicon Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low Substrate Temperature
- 2-Step Growth Method and Microcrystalline Silicon Thin Film Solar Cells Prepared by Hot Wire Cell Method
- Highly Conductive Boron Doped Microcrystalline Si Films Deposited by Hot Wire Cell Method and its Application to Solar Cells
- Microcrystalline Silicon Films and Solar Cells Prepared by Photochemical Vapor Deposition on Textured SnO_2 with High Haze Factors
- Room Temperature Nb-Based Single-Electron Transistors
- Room Temperature Nb-Based Single-Electron Transistors
- Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method
- High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition
- Structural Analysis of Side and SiGeC Alloys by Ab Initio Total-Energy Calculations
- Structural Analysis of SiGeC Alloys by ab initio Total-Energy Calculations
- Fabrication of Sub-Micron Gap Structures using Directly-Deposited Amorphous Carbon Wires
- Development of Polycrystalline Culn_xGa_Se_2 Thin-Film Solar Cells with Band Gap of 1.3 to 1.5 eV
- Growth Mechanism during Silicon Epitaxy by Photochemical Vapor Deposition at Low Temperatures
- Characterization of Hydrogen in Epitaxial Silicon Films Grown at Very Low Temperatures
- Analysis of H_2-Dilution Effects on Photochemical Vapor Deposition of Si Thin Films
- Room Temperature Operation of Amorphous Carbon-Based Single-Electron Transistors Fabricated by Beam-Induced Deposition Techniques
- Single-Electron Tunneling through Amorphous Carbon Dots Array
- Sub-Micron Tungsten Carbide/Amorphous Carbon Stacked Diode Fabricated by Ion- and Electron-Beam-Induced Deposition Technique
- Fabrication of Sub-Micron Tungsten Carbide (WCx)/Amorphous Carbon (a-C) Stacked Junction By Beam-Induced Reaction Processes
- Anomalous Electrical Characteristics of Epitaxial InN Films Having a High Electron Comcentratiorn at Very Low Temperature
- Application of Carbonaceous Material for Fabrication of Nano-Wires with a Scanning Electron Microscopy
- Characterization of cuInSe_2 thin Films by Photoluminescence Measurements
- Characterization of Hydrogen in Epitaxial Si Films Grown at Very Low Temperature