Konagai Makoto | Tokyo Inst. Technol. Tokyo Jpn

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著作論文

Effect of CdCl_2 Treatment Conditions and Stoichiometry on The Deep Level, Carrier Lifetime and Converstion Efficiency of CdTe Thin Film Solar Cells
Textured ZnO Thin Films for Solar Cells Grown by Metalorganic Chemical Vapor Deposition
Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
Room Temperature Nb-Based Single-Electron Transistors
Room Temperature Nb-Based Single-Electron Transistors
Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
Observation of Electroluminescence from Amorphous Silicon Solar Cells at Room Temperature
(GaAl)As/GaAs Solar Cells-Dopant Study on Zn and Be : III-3: III-V COMPOUND SOLAR CELLS
Model for Localized States Distributuon and Light Dependent Effects in Amorphous Silicon Solar Cells
Minority Carrier Diffusion Length in Amorphous Si Schottky Barrier Solar Cells
Photovoltaic Properties of a・Si-F-H and a・Si-h Prepared by DC Glow Discharge : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
High-Performance Hydrogenated Amorphous Silicon-Germanium Solar Cells Fabricated by Photochemical Vapor Deposition
Improvement of a-Si Solar Cell Fabricated by Mercury-Sensitized Photochemical Vapor Deposition Using H_2 Dilution Technique
Effect of Fluorine on the Photovoltaic Properties of Amorphous Silicon Prepared by DC Glow Discharge : III-1: AMORPHOUS SOLAR CELLS : Film Deposition
Room Temperature Nb-Based Single-Electron Transistors

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