High-Performance Hydrogenated Amorphous Silicon-Germanium Solar Cells Fabricated by Photochemical Vapor Deposition
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概要
- 論文の詳細を見る
High-quality a-SiGe:H films have been prepared by photochemical vapor deposition (photo-CVD) with a high dilution ratio of H_2. Films with a bandgap of 1.55 eV has a photoconductivity of 1.6×10^<-4> S/cm (AM1, 100 mW/cm^2). Solar cells of the p-i-n type were fabricated by applying such high-quality a-SiGe:H films to the i-layer. The performance of a-SiGe:H solar cells has been drastically improved by introducing graded-bandgap layers at the p/i and i/n hetero-interfaces. At present, a conversion efficiency of 8.65% with high collection efficiencies in the long-wavelength region has been achieved with 1.57 eV bandgap material.
- 社団法人応用物理学会の論文
- 1987-07-20
著者
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TAKAHASHI Kiyoshi
Tokyo University of Technology
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YAMANAKA Satoshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Yoshida Shinichiro
Ykk Corporation
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Yamanaka Satoshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Konagai Makoto
Tokyo Inst. Technol. Tokyo Jpn
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YAMANAKA Satoshi
Tokyo Institute of Technology, Department of Physical Electronics
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Takahashi Kiyoshi
Tokyo Institute Of Technology
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Takahashi Kiyoshi
Tokyo Engineering University
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