Improvement of a-Si Solar Cell Fabricated by Mercury-Sensitized Photochemical Vapor Deposition Using H_2 Dilution Technique
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概要
- 論文の詳細を見る
The fabrication of hydrogen-diluted amorphous silicon (a-Si) film by the mercury-sensitized photochemical vapor deposition (photo-CVD) method has been performed. The hydrogen content in the film along with the optical bandgap was found to increase with the hydrogen/silane dilution ratio, while the dihydride/monohydride bond ratio decreased at the substrate temperature of 15O℃. As a result, a decrease in the defect density was observed. Moreover,the photo- and dark conductivities were maintained in the range of 3 X 10^-5 and 1 X 1O^-10 S/am, respectively, in spite of the fact that the optical bandgap widened. The solar cells with hydrogen diluted i-layers were fabricated and showed improvement in the open-circuit voltage and fill factor (FF), resulting in the increase of both initial and stabilized efficiencies. The forward- and reverse-bias dark I-V characteristics measurement of so-lar cells revealed improvement in quality and stability of the hydrogen-diluted i-layers.
- 社団法人応用物理学会の論文
- 1994-11-15
著者
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YAMADA Akira
Tokyo Institute of Technology
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Konagai Makoto
Tokyo Inst. Technol. Tokyo Jpn
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Siamchai Pavan
Tokyo Institute Of Technology Department Of Electrical And Electronic Engineering
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Yamada Akira
Tokyo Institute Of Technology Department Of Electrical And Electronic Engineering
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Yamada Akira
Tokyo Inst. Technol. Tokyo Jpn
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