Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-08-26
著者
-
KONAGAI Makoto
Tokyo Institute of Technology
-
ISHII Makoto
Optoelectronics Joint Research Laboratory
-
Ishii Masami
Electrotechnical Laboratory
-
Ishii M
Electrotechnical Laboratory
-
Ishii M
Optoelectronics Joint Research Laboratory
-
Ishii M
Toyota Central Res. And Dev. Lab. Inc. Aichi Jpn
-
Matsumoto K
Electrotechnical Lab. Ibaraki‐kenn Jpn
-
Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
-
Matsumoto Kazuhiko
Advanced Industrial Science And Technology:tsukuba University:crest
-
Ishii M
Liquid Crystal Lab. Sharp Corp.
-
SHIRAKASHI Jun-ichi
Electrical and Electronic System Engineering, Tokyo University of Agriculture and Technology
-
Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
-
MIURA Naruhisa
Tokyo Institute of Technology
-
Ishii M
Central Research Laboratory Nihon Cement Co. Lid.
-
Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
-
Matsumoto Kazuhisa
Sumitomo Electric Industries Ltd.
-
Konagai Makoto
Tokyo Inst. Technol. Tokyo Jpn
-
Konagai M
Department Of Physical Electronics Tokyo Institute Of Technology
-
Miura N
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Ishii M
Shonan Inst. Technol. Kanagawa Jpn
-
Shirakashi Junichi
Electrotechnical Laboratory
-
Shirakashi Jun-ichi
Electrotechnical Laboratory
-
Matsumoto Kazuhiko
Electrotechnical Laboratory
関連論文
- Growth of Strain-Relaxed Si_C_y Films with Compositionally Graded Buffer Layers by Gas Source Molecular Beam Epitaxy
- Novel In(OH)_3:Zn^ Buffer Layer for Cu(InGa)Se_2 Based Solar Cells
- Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1-μm-Thick CdTe Thin Film Solar Cells
- Phosphorous Doping of Strain-Induced Si_C_y Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
- Preferred Orientation Control of Cu(In_Ga_x)Se_2 (x≈0.28) Thin Films and Its Influence on Solar Cell Characteristics
- Effect of CdCl_2 Treatment Conditions and Stoichiometry on The Deep Level, Carrier Lifetime and Converstion Efficiency of CdTe Thin Film Solar Cells
- P-Doping into Strain-Induced Si_C_y Epitaxial Films Grown by Low Temperature Chemical Vapor Deposition
- Epitaxial Growth of γ-In_2Se_3 Films by Molecular Beam Epitaxy
- Epitaxial Growth of Si_C_y Film by Low Temperature Chemical vapor Deposition
- Formation of pn Homojunction in Cu(InGa)Se_2 Thin Film Solar Cells by Zn Doping
- Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method
- Improvement of the Electrochemical Profiling Technique of Carrier Concentration in Cu(InGa)Se_2 Thin Film Solar Cells
- DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
- High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact
- Improvement of Stabilized Efficiency of Amorphous Silicon Solar Cell by SiH_2Cl_2 Addition
- Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance-Voltage Profiling Technique
- Improvement in Performances of ZnO : B/i-ZnO/Cu(InGa)Se_2 Solar Cells by Surface Treatments for Cu(InGa)Se_2
- Electrical and Structural Characterizations of Cu(InGa)Se_2 Thin Films Using Electrochemical Capacitance-Voltage Method and Focused-Ion Beam Process
- Cu(InGa)Se_2 Thin-film Solar Cells with High Resistivity ZnO Buffer Layers Deposited by Atomic Layer Deposition
- Prospects of Thickness Reduction of the CdTe Layer in Highly Efficient CdTe Solar Cells Towards 1 μm
- Molecular Beam Epitaxy and Characterization of Layered In_2Se_3 Films Grown on Slightly Misoriented (001)GaAs Substrates
- Heteroepitaxy and Multiquantum Well Structure of Layered Compound GaSe/GaS_xSe_ on (001) GaAs Substrate
- Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence
- Characterizaiton of ZnIn_xSe_y Thin Films as a Buffer Layer for High Efficiency Cu(InGa)Se_2 Thin-Film Solar Cells
- Breakdown Characteristics of SF_6 Gap Disturbed by a Metallic Protrusion under Oscillating Transient Overvoltages
- V-t Characteristics of SF6 Gap Disturbed by a Needle-Shaped Protrusion under Oscillating Transient Overvoltages
- Numerical Analysis to Improve the Stabilized-Efficiency of Amorphous Silicon Solar Cells with New Device Structure
- Efficiency Improvement of Cu(InGa)Se_2 Thin Film Solar Cells with a High Ga Composition Using Rapid Thermal Annealing
- Improvement in Aspect Ratio of P-GaAs Oxide Fabricated by Atomic Force Microscope (AFM)-Based Nanolithography Using Pulsed Voltage
- Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation
- Polycrystalline Cu(InGa)Se_2 Thin-Film Solar Cells with ZnSe Buffer Layers
- Epitaxial Growth of GaSe Films by Molecular Beam Epitaxy on GaAs(111), (001) and (112) Substrates
- Preparation of Superconducting Bi-Pb-Sr-Ca-Cu-O Glass Ceramics with T_=106 K
- Formation of the High-T_c Phase of Bi_Pb_xSr_Ca_Cu_O_y (0 ≦ x ≦ 0.05)
- Effect of Annealing on Superconductivity in Bi-Pb-Sr-Ca-Cu-O System
- Influence of Intermediate Pressing on Superconducting Characteristics in Bi-Pb-Sr-Ca-Cu-O System
- Influence of Cooling Rate on Superconducting Characteristics of Bi-Pb-Sr-Ca-Cu-O Ceramics
- Superconducting Characteristics and Microstructure of Bi-Pb-Sr-Ca-Cu-O Ceramics : Electrical Properties of Condensed Matter
- Critical Current Density of Bi-Pb-Sr-Ca-Cu-O Superconducting Ceramics : Electrical Properties of Condensed Matter
- Control of the Arrangement of the Native Gallium Vacancies in Ga_2Se_3 on (100)GaAs by Molecular Beam Epitaxy
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Textured ZnO Thin Films for Solar Cells Grown by Metalorganic Chemical Vapor Deposition
- Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
- Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
- Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
- V-Shaped Gate High Electron Mobility Transistor (VHEMT)
- Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
- Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
- Reversible Reconstruction Changes in GaAs Surfaces due to Hydrogen Termination
- Study of Surface Processes in the Digital Etching of GaAs
- XANES Analysis of Optical Activation Process of Er in Si:Er2O3 Thin Film:Electronic and Structural Modifications around Er (Proceedings of the Second International Conference on SRMS(Synchrotron Radiation in Materials Science)(2))
- Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures
- Preparation of Hydrogenated Amorphous Silicon Carbon Nitride Films by Hot-Wire Chemical Vapor Deposition Using Hexamethyldisilazane for Silicon Solar Cell Applications
- Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition
- Preparation of Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix
- Low-Temperature Deposition of Highly Conductive n-Type Hydrogenated Nanocrystalline Cubic SiC Films for Solar Cell Applications
- TiO_2-Coated Transparent Conductive Oxide (SnO_2:F) Films Prepared by Atmospheric Pressure Chemical Vapor Deposition with High Durability against Atomic Hydrogen
- Intrinsic Microcrystalline Silicon Thin Films Prepared by Hot-Wire Cell Method and Their Application to Solar Cells
- Properties of Hydrogenated Microcrystalline Cubic Silicon Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low Substrate Temperature
- 2-Step Growth Method and Microcrystalline Silicon Thin Film Solar Cells Prepared by Hot Wire Cell Method
- Highly Conductive Boron Doped Microcrystalline Si Films Deposited by Hot Wire Cell Method and its Application to Solar Cells
- Microcrystalline Silicon Films and Solar Cells Prepared by Photochemical Vapor Deposition on Textured SnO_2 with High Haze Factors
- Room Temperature Nb-Based Single-Electron Transistors
- Room Temperature Nb-Based Single-Electron Transistors
- Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
- Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
- Low-Pressure OMVPE of GaAs Using Triethylgallium
- Processing and Superconducting Properties of GdBa_2Cu_3O_ Ceramics : Electrical Properties Condensed Matter
- Influence of Preparative Conditions on the Superconducting Characteristics in GdBa_2Cu_3O_ Ceramics : Electrical Properties of Condensed Matter
- Observation of GdBa_2Cu_3O_ Ceramic Microstructure : Electrical Properties of Condensed Matter
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System
- Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode
- Dependence of Magnetic Shielding Property on Critical Current Density
- Magnetic Shielding Propertiy of Bi(Pb)-Sr-Ca-Cu-O Superconducting Tube
- Observation of Electroluminescence from Amorphous Silicon Solar Cells at Room Temperature
- Development of Polycrystalline Culn_xGa_Se_2 Thin-Film Solar Cells with Band Gap of 1.3 to 1.5 eV
- (GaAl)As/GaAs Solar Cells-Dopant Study on Zn and Be : III-3: III-V COMPOUND SOLAR CELLS
- Model for Localized States Distributuon and Light Dependent Effects in Amorphous Silicon Solar Cells
- Minority Carrier Diffusion Length in Amorphous Si Schottky Barrier Solar Cells
- Photovoltaic Properties of a・Si-F-H and a・Si-h Prepared by DC Glow Discharge : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
- Critical Current Density and Microstructure of Superconducting YBa_2Cu_3O Films Prepared by a Tape Casting Method : Electrical Properties Condensed Matter
- Fabrication of Superconducting YBa_2Cu_3O_ Films by a Tape Casting Method
- Magnetic Detector Using Bi-Pb-Sr-Ca-Cu-O Superconductive Film
- Crystalline Phases in Superconductor Ba-Y-Cu-O with High T_c Prepared by Melting Method
- Alignment Technique for Thin-Film-Transistor Liquid-Crystal Displays : Liquid Crystal Display
- Alignment Technique for Thin-Film-Transistor Liquid-Crystal Displays
- Analysis of H_2-Dilution Effects on Photochemical Vapor Deposition of Si Thin Films
- Photoluminescence of the 78 meV Acceptor in GaAs Layers Grown by Molecular Bearn Epitaxy
- Effect of Arsenic Source on Electron Trap Concentrationsin MBE-Grown Al_Ga_As
- Effects of Growth Conditions on Electron Trap Concentrations in Si-Doped Al_Ga_As Grown by MBE
- Superficial Aggravation of Sputter-deposited Bi-Sr-Ca-Cu-O Films by Annealing : Electrical Properties of Condensed Matter
- Control of Current in 2DEG Channel by Oxide Wire Formed Using AFM
- Oxidation Using AFM and Subsequent Etching in Water of Inverted-Type δ-Doped HEMT
- Effect of Fluorine on the Photovoltaic Properties of Amorphous Silicon Prepared by DC Glow Discharge : III-1: AMORPHOUS SOLAR CELLS : Film Deposition