Matsumoto Kazuhiko | Electrotechnical Laboratory (elt)

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著作論文

GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
V-Shaped Gate High Electron Mobility Transistor (VHEMT)
Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
Room Temperature Nb-Based Single-Electron Transistors
Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
Room Temperature Nb-Based Single-Electron Transistors
Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
Surface Observation and Modification of Si Substrate in NH_4F and H_2SO_4 Solutions
Surface Observation and Modification of Si Substrate in Solutions
Electrochemical Scanning Tunneling Microscopy and Atomic Force Microscopy Observationson Si(111) in Several Solutions
Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode
pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
Single Electron Memory at Romm Temperature: Experiment and Simulation
Two-Dimensional Electron Gas in an n^+-GaAs/Undoped AlGaAs/Undoped GaAs SIS Structure
High Temperature Stable W-GaAs Schottky Barrier
Submicron-Length Tungsten-Gate Self-Aligned GaAs FET
Ultra-Low Biased Field Emitter Using Single Wall Carbon Nanotube Directly Grown onto Silicon Tip by Thermal CVD
Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)
GaAs Inversion-Base Bipolar Transistor (GaAs IBT) with Graded Emitter Barrier : Semiconductors and Semiconductor Devices
Control of Current in 2DEG Channel by Oxide Wire Formed Using AFM
Oxidation Using AFM and Subsequent Etching in Water of Inverted-Type δ-Doped HEMT

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