Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-12-20
著者
-
Kojima Tetsuya
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
-
林 康明
京都工芸繊維大学大学院
-
HAYASHI Yutaka
Electrotechnical Laboratory
-
林康 明
京都工芸繊維大学工芸学部電子情報工学科
-
林 康明
京都工芸繊維大学大学院工芸科学研究科
-
Matsumoto K
Electrotechnical Lab. Ibaraki‐kenn Jpn
-
Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
-
Matsumoto Kazuhiko
Advanced Industrial Science And Technology:tsukuba University:crest
-
Hayashi Yuzo
Irie Koken Co. Ltd.
-
Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
-
Matsumoto Kazuhisa
Sumitomo Electric Industries Ltd.
-
KOJIMA Takeshi
Electrotechnical Laboratory
-
Kojima T
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
-
YOSHIMOTO Tomomi
Electrotechnical Laboratory, MITI
-
NAGATA Toshiyuki
Electrotechnical Laboratory, MITI
-
Yoshimoto T
Hokkaido Tokai Univ. Sapporo Jpn
-
Nagata T
Department Of Biological Sciences Graduate School Of Science University Of Tokyo
-
Nagata Toshiyuki
Dept. Of Biological Sciences Graduate School Of Science. Univ. Of Tokyo
-
Matsumoto Kazuhiko
Electrotechnical Laboratory
関連論文
- 第51回応用物理学関係連合講演会(2004年)
- Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon Films
- Low-Temperature Pretreatment in Chemical Vapor Deposition of a Silicon Film for Solid-Phase Epitaxial Growth : Techniques, Instrumentations and Measurement
- JAXAにおけるダストプラズマ微小重力実験の現状と将来計画
- 微小重力実験のための微粒子プラズマ (PK3-plus) における電子密度計測
- 21pZB-7 微粒子プラズマの微小重力下実験(21pZB プラズマ基礎(微粒子プラズマ・非中性プラズマ),領域2(プラズマ基礎・プラズマ科学・核融合プラズマ・プラズマ宇宙物理))
- 7. おわりに(プラズマプロセスによるカーボンナノチューブ配向成長の現状と課題)
- 6. カーボンナノチューブ配向成長への直流バイアスの効果(プラズマプロセスによるカーボンナノチューブ配向成長の現状と課題)
- Analyses of Early Stages of Vertically Aligned Carbon Nanotube Growth by Plasma-Enhanced Chemical Vapor Deposition
- 直流プラズマ化学気相堆積法による配向カーボンナノチューブの低温成長
- 電子放出源のためのSiC被膜付き柱状Siの微細加工及びデバイス応用(電子管と真空ナノエレクトロニクス及びその評価技術)
- 3 強結合プラズマとカーボン微粒子(シンポジウムVII : 微粒子プラズマの展望)
- 直流プラズマ化学気相堆積法によるカーボンナノチューブの成長とその電界電子放出特性
- 表面波励起マイクロ波プラズマによる大面積基板への配向カーボンナノチューブの作製
- 重力下および微小重力下におけるプラズマ中微粒子の挙動
- 成膜中の膜厚をレーザーを利用して測る
- 6.ダストプラズマとカーボン微粒子(ダストプラズマの基礎物理とその広がり)
- ミー散乱エリプソメトリによるその場微粒子計測
- 科学解説 微粒子プラズマによるクーロン結晶
- プラズマCVDによる微粒子成長と強結合微粒子プラズマの可視化
- 低誘電率層間絶縁膜のプラズマ化学気相堆積
- Two-Dimensional Melting in a Coulomb Crystal of Dusty Plasmas
- HMDSO添加のフロロカーボンプラズマを用いた低誘電率絶縁膜のCVD
- グロー放電プラズマ中での微粒子成長とクーロン結晶の形成
- プラズマ中のダスト挙動の解析とクーロン結晶の形成
- Si(NCO)_4添加のフロロカーボンプラズマを用いた低誘電率絶縁膜のCVD
- 3.強結合ダストプラズマの結晶化と遷移(ダストプラズマの現状と課題)
- クーロン結晶と強結合プラズマ
- テトライソシアネートシランを用いたSiO_2膜の堆積
- ミ-散乱エリプソメトリ- -プラスマ中微粒子成長過程の新しいインプロセス計測法-
- 4p-W-1 微粒子プラズマに関する最近の話題
- プラズマCVDによるpoly-Si膜の低温形成過程のインプロセス偏光解析モニタリング
- 偏光解析モニタのプロセス装置への組み込みに対する対策 (第26回真空に関する連合講演会プロシ-ディングス--昭和60年11月6日〜8日,東京)
- 偏光解析法を利用した膜厚モニタ (第23回真空に関する連合講演会プロシ-ディングス--昭和57年11月,神戸)
- 偏光解析法による薄膜の自動インライン評価
- ダストプラズマ研究における国際協力
- Gas Phase Syntheses of Single-Walled Carbon Nanotubes by Chemical Vapor Deposition Using Hot filament and Plasma
- テトライソシアネートシランを用いたSiO:F膜のプラズマCVD
- Crystal Structure of the Metastable State of Ferroelectric Lead Germanate
- Observation of the Crystallization Process from Amorphous PbTiO_3 and Pb_5Ge_3O_ by Atomic Force Microscopy
- In Situ Hydrogenation of Amorphous Silicon Prepared by Thermal Decomposition of Disilane
- Light-Induced Changes in Plasma-Deposited Hydrogenated Amorphous Silicon Prepared under Visible-Light Illumination Studied by a Constant Photocurrent Method
- Constant-Photocurrent-Method (CPM) Studies on Light-Induced Changes in Hydrogenated Amorphous Silicon
- Origin of the Reduction of Light-Induced Changes in Plasma-Deposited Hydrogenated Amorphous Silicon Prepared under Visible-Light Illumination
- Effect of Visible-Light Illumination on the Growing Surface of an a-Si:H Film in Plasma Decomposition of SiH_4
- Re-Examination of Carrier Trapping Models for Light-Induced Changes in Hydrogenated Amorphous Silicon
- Minority Carrier Lifetime in Laser Recrystallized Polysilicon
- Raman Scattering Studies on Hydrogenated Amorphous Silicon Prepared under High Deposition Rate Conditions
- Wall Heating Effect on Crystallization of Low-Temperature Deposited Silicon Films from an Inductuvely-Coupled Plasma
- Lower Temperature Deposition of Polycrystalline Silicon Films from a Modified Inductively Coupled Silane Plasma
- Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
- High-Temperature Operation of Silicon Carbide MOSFET
- Evaluation of Optical Gain Properties of GaInAsP/InP Compressively Strained Quantum-Wire Lasers
- Temperature Dependence of Internal Quantum Efficiency of 20-nm-Wide GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
- Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Miniband Base Transistor
- Sharp Resonance Characteristics in Triple-Barrier Diodes with a Thin Undoped Spacer Layer
- Phase-Locked Epitaxy Using RHEED Intensity Oscillation
- Effects of Optical Confinement in Textured Antireflection Coating using ZnO Films for Solar Cells
- Evaluation of the Si-SiO_2 Interface by the Measurement of the Surface Recombination Velocity S by the Dual-Mercury Probe Method
- Hydrogen Annealing of Transparent Gate MOS Diodes
- A Low-Voltatge Alterable Metal-Oxide-Nitride-Oxide-Semiconductor Memory with Nano-Meter Thick Gate Insulators (NM-MONOS) : LATE NEWS
- Measurement of the Minority-Carrier Lifetime in a Semiconductor Wafer by a Two-Mercury-Probe Method and Its Application to Evaluation of the Surface Recombination Velocity
- Shapiro Steps in Small-Area SIS Junction at 70 GHz and 140 GHz
- Multilevel Aluminum Dual-Damascene Interconnects for Process-Step Reduction in 0.18 μm ULSIs
- Multilevel Aluminum Dual-Damascene Interconnects (Al-DDI) for Process-Step Reduction in 0.18um-ULSIs
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- GaInAsP/InP Compressively Strained Quantum-Wire Lasers Fabricated by Electron Beam Lithography and 2-Step Organometallic Vapor Phase Epitaxy
- pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
- Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Simple Analytical Methods for Determining Optical Constants of Thin Films : Their Application to Amorphous Silicon
- Solar Cell Characteristics of High-Efficiency Polycrystalline Silicon Solar Cells Using SOG-Cast Wafers
- The Growth of Single Domain GaAs Films on Double Domain Si(001) Substrates by Molecular Beam Epitaxy
- Development of High Efficiency Polycrystalline Silicon Solar Cells Using Solar Grade Cast Wafers
- Formation of Zn-O Complexes During the Molecular Beam Epitaxial Growth of GaP on Si
- プラズマ科学の開発と応用 プラズマCVDによるカーボンナノチューブの成長
- Large-Area Electron Cyclotron Resonance Plasma Source with Permanent Magnets
- Harmonic Mixing with SRS Tunnel Junctions in the Millimeter and Submillimeter Regions
- Effects of Magnetic Field on the Josephson Noise from an SIS Mixer
- プラズマ化学反応によるカーボンナノチューブの成長
- 微粒子プラズマの性質と基礎実験 (小特集1 低気圧放電プラズマ中における微粒子の挙動とその制御)
- Effect of Semiconductor Thickness on Capacitance-Voltage Characteristics of an MOS Capacitor
- Two-Dimensional Electron Gas in an n^+-GaAs/Undoped AlGaAs/Undoped GaAs SIS Structure
- Diagnostics of Fluorocarbon Radicals in a Large-area Permanent Magnet Electron Cyclotron Resonance Etching Plasma
- 表面波励起マイクロ波プラズマによる大面積基板への配向カーボンナノチューブの作製
- Doping Profile Measurement of a Bonded Silicon-on-Insulator Wafer by Capacitance-Voltage Measurements
- Carrier Injection into SiO_2 from Si Surface Driven to Avalanche Breakdown by a Linear Ramp Pulse, and Trapping, Distribution and Thermal Annealing of Injected Holes in SiO_2
- Injection, Trapping and Release from SiO_2 of Photo-Generated Hole Charge for an Erasable Non-Volatile Optical Memory
- Bias-enhanced Nucleation of Oriented Diamond on Singlecrystalline 6H-SiC Substrates
- Diamond Nucleation on Singlecrystalline 6H-SiC Substrates by Bias-Enhanced Nucleation in Hot Filament Chemical Vapor Deposition
- Plasma Copolymerization of Tetratluoroethylene/Hexamethyldisiloxane and In Situ Fourier Transform Infrared Spectroscopy of Its Gas Phase
- プラズマ支援熱フィラメント化学気相成長法で気相合成したナノカーボン微粒子の水素貯蔵特性
- Minority Carrier Lifetime Measurement in HF Solution to Evaluate Si Substrates for Solar Cells
- Characteristics of Three-μm-Thick Silicon Solar Cells Using Bonded Silicon-on-Insulator Wafer
- 講演 ダストプラズマ中のク-ロン結晶による結晶モデル (特集:平成8年度若手セミナ-「Virtual Realityで放電プラズマを科学する」--放電シミュレ-ションのカンどころ(2))
- GaAs Inversion-Base Bipolar Transistor (GaAs IBT) with Graded Emitter Barrier : Semiconductors and Semiconductor Devices
- Effect of Localized Recombination Planes on Minority-Carrier Diffusion Length in Silicon Solar Cells
- Pair and Quasiparticle Tunnelings in Arrays of SIS Junctions Observed by Radio Frequency Noise
- SVI-1 微粒子プラズマ結晶と微小重力下実験(シンポジウムVI : 微小重力におけるコンプレックスプラズマ)