Crystal Structure of the Metastable State of Ferroelectric Lead Germanate
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-09-30
著者
-
Kojima Tetsuya
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
-
MATSUI Yoshio
National Institute for Research in Inorganic Materials
-
Takahashi K
Department Of Physical Electronics Tokyo Institute Of Technology
-
UEHARA Hiroyuki
Department of Materials Science and Technology, Science University of Tokyo
-
TAKAHASHI Koichiro
National Institute for Research in Inorganic Materials
-
Hatano Jun
Department Of Materials Science And Technology Science University Of Tokyo:institute Of Liquid Cryst
-
Hatano Jun
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
-
Hatano Jun
Department Of Materials Science And Technology Science University Of Tokyo
-
Takahashi K
National Inst. Res. In Inorganic Materials Ibaraki Jpn
-
Uehara Hiroyuki
Department Of Applied Biological Chemistry Faculty Of Agriculture Shizuoka University
-
Jun Hatanao
Faculty Of Industrial Science And Technology Tokyo University Of Science
-
Hatano Jun
Department Of Materials Science And Technology Faculty Of Science And Technology Science University
-
Hatano Jun
Faculty Of Industrial Science And Technology Tokyo University Of Science
-
TAKAHASHI Kaoru
Department of Applied Physics, Tokyo University of Agriculture and Technology
-
Matsui Y
Advanced Electron Microscope Group Advanced Nano- Characterization Center National Institute For Mat
-
Matsui Y
National Inst. Materials Sci. Ibaraki Jpn
-
Matsui Y
National Institute For Research In Inorganic Materials
-
KOJIMA Tatsuya
Department of Materials Science and Technology, Faculty of Science and Technology, Science Universit
-
ISHIDA Yoichi
Department of Materials Science and Technology, Faculty of Science and Technology, Science Universit
-
ADACHI Yutaka
National Institute for Research in Inorganic Materials
-
Takahashi K
Department Of Physical Electronics Tokyo Institute Of Tecnology
-
Matsui Y
Nims Tsukuba Jpn
-
Takahashi K
Tokyo Inst. Technol. Yokohama Jpn
-
Uehara H
Department Of Liberal Arts And Engineering Sciences Hachinohe National College Of Technology
-
Takahashi Kensuke
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
-
Takahashi Kuniharu
Graduate School Of Science And Technology Niigata University
-
Takahashi Kazuhiko
National Research Institute For Metals Tsukuba Laboratories:sanyo Elect. Co. Ltd.
-
Takahashi Kouchiro
National Institute For Research In Inorganic Materials
-
Matsui Yoshio
National Institute For Materials Science
-
Hatano J
Faculty Of Industrial Science And Technology Tokyo University Of Science
-
Adachi Y
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
-
Ishida Y
Osaka Inst. Technol. Osaka Jpn
-
Adachi Yutaka
National Inst. For Materials Sci.
-
Kojima T
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
-
Kojima Toshiyuki
Research Institute Of Electrical Communication Tohoku University
-
Kojima Tatsuya
Department Of Biotechnology Tottori University
-
Takahashi Kasuke
National Laboratory For High Energy Physics
-
Takahashi Katsuaki
Department Of Applied Chemistry Okayama University
-
Ishida Yoichi
Department Of Applied Chemistry Faculty Of Engineering Kyusyu University
-
TAKAHASHI Kenji
Semiconductor Research Laboratory, Pioneer Electronic Corporation
-
Kojima Tatsuya
Department of Applied Chemistry, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
関連論文
- Planar Defects in the New Superconducting Oxide (Eu_Ce_x)_2(Ba_Eu_y)_2Cu_3O z_Observed by High-Resolution Transmission Electron Microscopy
- A New Family of Superconducting Copper Oxides : (Ln_Ce_x) 2(Ba_Ln_y)_2Cu_3O_ (Ln : Nd, Sm, Eu)
- TEM study of the influence of antisite defects on magnetic domain structures in double perovskite Ba_2FeMoO_6
- Crystallizing Process of Amorphous Thick Films of Ferroelectric Lead Germanate Family ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Domain Nucleation During Polarization Reversal in Lead Germanate ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Periodic Ultrasonography Checkup for the Early Detection of Pancreatic Cancer : Preliminary Report
- Acinar Cell Carcinoma of the Pancreas Successfully Treated by En Bloc Resection and Intraperitoneal Chemotherapy for Peritoneal Relapse : A Case Report of a 15-Year Survivor
- Dielectric Relaxation Behavior of Ferroelectric Phase in Antiferroelectric Liquid Crystals
- Ferrielectricity in Chiral Smectic C_β of an Antiferroelectric Liquid Crystal
- Deflection of Light at the Boundaries between Ferroelectric and Antiferroelectric States in Chiral Smectic Liquid Crystals
- Optical Activity in Antiferroelectric Liquid Crystals
- Dielectric Relaxation Modes in the Phases of Antiferroelectric Liquid Crystals
- Phase Sequence in Smectic Liquid Crystals Having Fluorophenyl Group in the Core ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- A Study on Zinc Isotope Fractionation in a Benzo Crown Resin/Acetone System
- Crystal Structure of the Metastable State of Ferroelectric Lead Germanate
- Observation of the Crystallization Process from Amorphous PbTiO_3 and Pb_5Ge_3O_ by Atomic Force Microscopy
- Planar Defects in the New Superconducting Oxide (Eu_Ce_x)_2(Ba_Eu_y)_2Cu_3O_z Observed by High-Resolution Transmission Electron Microscopy
- A New Family Superconducting Copper Oxides : (Ln_Ce_x)_2(Ba_Ln_y)_2Cu_3O_(Ln:Nd,Sm,EU)
- Intercalation of Nickel Hydroxide into Large Crystal of Vermiculite
- Preparation of Non-Stoichiometric Nd_MnO_ by Coprecipitation Method
- Photoluminescence Studies and Solar-Cell Application of CuInSe_2 Thin Films Prepared using Selenization Techniques
- Photoluminescence Study of CuInSe_2 Thin Films Prepared by the Selenization Technique
- Study of CuInSe_2 Formation Kinetics in the Selenization Process by Raman Spectroscopy
- InGaP/GaAs Heterojunction Bipolar Transistors with an Ultra-High Carbon-Doped Base (p=1.5×10^cm^)
- Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium
- A 400 kV High Resolution-Analytical Electron Microscope Newly Constructed
- Epitaxial Growth of GaSe Films by Molecular Beam Epitaxy on GaAs(111), (001) and (112) Substrates
- Photoinduced Oxidation of Epitaxial Ga_2Se_3 Grown by Molecular Beam Epitaxy
- Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
- Cross-sectional HRTEM study of (Nd, Ce)_2CuO_4 superconducting films, prepared by post-oxidation of Cu/Nd(Ce) metal layers on SrTio_3
- Observation of the interaction of vortices with dislocations in a Nb superconductor by a cryo-Lorentz EM
- High-Resolution Transmission Electron Microscopy of Long-Period Structures of Various Phases in a Bi-Sr-Cu-O System
- High-Resolution Electron Microscopy of Modulated Structure in 20 K Superconducting Oxide Bi_2Sr_2CuO_y : Electrical Properties of Condensed Matter
- High Resolution Electron Microscopy of Intergrowth and Modulated Structure in 100 K High-T_c Superconductor Bi_2 (Sr,Ca) _4Cu_3O_y : Electrical Properties of Condensed Matter
- Structure Analysis of the Bi_2(Sr,Ca)_3Cu_2O_ Superconducting Crystal Based on the Computer Simulation of HRTEM Images : Condensed Matter
- Twins and Intergrowth Defects in High-T_c Bi-Sr-Ca-Cu-O Superconductor Examined by High-Resolution Electron Microscopy : Electrical Properties of Condensed Matter
- On the 110 K Superconductor in the Bi-Ca-Sr-Cu-O System : Electrical Properties of Condensed Matter
- Possible Model of the Modulated Structure in High-T_c Superconductor in a Bi-Sr-Ca-Cu-O System Revealed by High-Resolution Electron Microscopy : Electrical Properties of Condensed Matter
- Identification of the Superconducting Phase in the Bi-Ca-Sr-Cu-O System : Electrical Properties of Condensed Matter
- High-Resolution Electron Microscopy of Modulated Structure in the New High-T_c superconductors of the Bi-Sr-Ca-Cu-O System : Electrical Properties of Condensed Matter
- High-Resolution Electron Microscopy of Planer Defects and Dislocation in Ba_2YCu_3O_y
- Electron Diffraction and Microscope Study of Ba-Nd-Cu-O Superconducting Oxides and Related Compounds
- Crystal Structure of the Superconductor Ba_Nd_Cu_3O_
- Electron Diffraction and Microscope Study of Radiation Damage in Ba_2YCu_3O_y
- Crystal Structure of Ba_La_Cu_3O_
- Semi-Monochromatic Plasma Flash Radiography and Its Application to Biomedical Imaging Simulation
- Formation of ZnGa_2Se_4 Epitaxial Layer during Molecular Beam Epitaxial Growth of Ga_2Se_3 on ZnSe
- Raman Study of Epitaxial Ga_2 Se_3 Films Grown by Molecular Beam Epitaxy
- Optical Anisotropy of Vacancy-Ordered Ga_2Se_3 Grown by Molecular Beam Epitaxy
- Wall Heating Effect on Crystallization of Low-Temperature Deposited Silicon Films from an Inductuvely-Coupled Plasma
- Lower Temperature Deposition of Polycrystalline Silicon Films from a Modified Inductively Coupled Silane Plasma
- Metalorganic Chemical Vapor Deposition of ZnO Using D_2O as Oxidant
- Optimization of ZnO Films for Amorphous Silicon Solar Cells
- Large-Area ZnO Thin Films for Solar Cells Prepared by Photo-Induced Metalorganic Chemical Vapor Deposition
- Mobility Enhancement of Textured ZnO Films by Ultraviolet Light Irradiation
- Textured ZnO Thin Films for Solar Cells Grown by Metalorganic Chemical Vapor Deposition
- Diffuse Phase Transition and Anisotropic Evolution of Nanodomains in Nd_Sr_MnO_3(Condensed matter : electronic structure and electrical, magnetic, and optical properties)
- Low-Temperature Si Epitaxy by Photochemical Vapor Deposition with SiH_2Cl_2
- p-Type a-SiC:H Films Using Triethylboron and Its Application to Solar Cells
- Effects of Deuterium on Low-Temperature Si Epitaxy by Photo-Chemical Vapor Deposition
- Heavily P-Doped (>10^ cm) Silicon Films Grown by Photochemical Vapor Deposition at a Very Low Temperature of 250℃
- Photochemical Vapor Deposition of Si/Si_Ge_x Strained Layer Superlattices at 250℃ : Silicon Heterostructures(Solid State Devices and Materials 1)
- Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250℃
- Evaluation of Optical Gain Properties of GaInAsP/InP Compressively Strained Quantum-Wire Lasers
- Temperature Dependence of Internal Quantum Efficiency of 20-nm-Wide GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
- Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Miniband Base Transistor
- Sharp Resonance Characteristics in Triple-Barrier Diodes with a Thin Undoped Spacer Layer
- Phase-Locked Epitaxy Using RHEED Intensity Oscillation
- Citric Acid Etching of ZnSe Surface and Application to the Homoepitaxy by Molecular Beam Epitaxy
- Atomically Flat GaAs(001) Surfaces Obtained by High-Temperature Treatment with Atomic Hydrogen Irradiation
- Development of dedicated STEM with high stability
- Fast and Simplified Technique of Proximity Effect Correction for Ultra Large Scale Integrated Circuit Patterns in Electron-Beam Projection Lithography
- Atomic-Scale Depth Profiling of Oxides/Si(111) and Oxynitrides/Si(100) Interface
- Fabrication of InGaN Multiple Quantum Wells Grown by Hydrogen FluX Modulation in RF Molecular Beam Epitaxy : Semiconductors
- Influence of Interface Structure on Oxidation Rate of Silicon : Surfaces, Interfaces, and Films
- Effects of Atomic Hydrogen on the Indium Incorporation in InGaN Grown by RF-Molecular Beam Epitaxy
- Coulomb Interaction Effect Correction in Electron-Beam Block Exposure Lithography
- Evaluation of CF_2 Radical as a Precursor for Fluorocarbon Film Formation in Highly Selective SiO_2 Etching Process Using Radical Injection Technique
- CF_X (X=1-3) Radical Measurements in ECR Etching Plasma Employing C_4F_8 Gas by Infrared Diode Laser Absorption Spectroscopy
- Synthesis and Properties of (1-x)PZN-xBZN Solid-Solution Compounds by Liquid-Evaporation Method ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- GaInAsP/InP Compressively Strained Quantum-Wire Lasers Fabricated by Electron Beam Lithography and 2-Step Organometallic Vapor Phase Epitaxy
- pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
- Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- High Resolution Transmission Electron Microscopy of Defects in High T_c Superconductor Ba_2YCu_3O_y
- Cation-Conductive Ceramics Examined by 1 MV HRTEM
- Profile-Imaging of Wavy Cleavage Surface of Bi_2Sr_2CaCu_2O_y by High-Resolution Transmission Electron Microscopy
- Some Results Obtained by a Newly Constructed Ultra-High-Resolution 1300 kV Electron Microscope
- Preparation and Crystal Structures of Bi-Based Layered Oxides Including Fe
- T_c = 113 K Bi-Based Superconductor Prepared by Doping Fluorine
- Low-Temperature Electron Microscopy of a Bi_2(Sr, Ca)_3Cu_2O_x Superconductor
- A High Resolution Lattice Image of Nb_O_ by Means of a High Voltage Electron Microscope Newly Constructed
- A Structural Defect of Natural Magnetite Observed in an Electron Microscope Lattice Image
- Direct Observation of Oxygen Atoms in a Tetragonal YBa_2Cu_3O_ High-T_c Superconductor by Means of Ultra-High-Resolution High Voltage Electron Microscopy
- New Compound Sr_3Ca_3Cu_6O_ with Modulated Superstructure
- High-Resolution Transmission Electron Microscopy of Commensurate Modulation in Bi_2Sr_2CoO_y
- X-Ray and Electron-Microscopic Studies on Single-Phase High T_c Superconductor, YBa_2Cu_3O_y
- Identification of the High T_c Superconductor in the System Y-Ba-Cu-O