Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-15
著者
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Kojima Tetsuya
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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NUNOYA Nobuhiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Ando Toshihiro
Core Research For Evolutional Science And Technology (crest) Japan Science And Technology Corporatio
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ando T
Okayama Prefectural Univ. Okayama Jpn
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Tamura M
Univ. Tokyo Tokyo Jpn
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Ando T
School Of Medicine. Yokohama City University
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TAMURA Munehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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KOJIMA Takashi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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ANDO Toshikazu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Nunoya Nobuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura S
Sony Corp. Yokohama Jpn
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Kojima T
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
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Nunoya N
Tokyo Inst. Technol. Tokyo Jpn
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Ando T
Chiba Inst. Sci. Chiba Jpn
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Tamura Munehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Kojima Takashi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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