KOJIMA Takashi | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
スポンサーリンク
概要
関連著者
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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KOJIMA Takashi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Kojima Takashi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Kojima Tetsuya
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
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Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura S
Sony Corp. Yokohama Jpn
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Kojima T
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
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TANAKA Suguru
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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YASUMOTO Hideo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Yasumoto Hideo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Yagi H
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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NAKAYA Hiroyuki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Yasumoto H
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Nakaya Hiroyuki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura M
Univ. Tokyo Tokyo Jpn
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TAMURA Munehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura Munehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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HAYAFUNE Yoshinori
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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NUNOYA Nobuhiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Ando Toshihiro
Core Research For Evolutional Science And Technology (crest) Japan Science And Technology Corporatio
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Yagi H
Konoshima Chemical Co. Ltd.
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Ando T
Okayama Prefectural Univ. Okayama Jpn
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Ando T
School Of Medicine. Yokohama City University
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Tanaka S
International Superconductivity Technol. Center Tokyo Jpn
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WATANABE Masahiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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ANDO Toshikazu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Nunoya Nobuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Hayafune Yoshinori
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
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Arai I
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Jia Xue-ying
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology :(present Address) Ire
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Bacher G
Wuerzburg Univ. Wuerzburg Deu
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Nunoya N
Tokyo Inst. Technol. Tokyo Jpn
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Ando T
Chiba Inst. Sci. Chiba Jpn
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BACHER Gerd
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Watanabe Masahiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
著作論文
- Evaluation of Optical Gain Properties of GaInAsP/InP Compressively Strained Quantum-Wire Lasers
- Temperature Dependence of Internal Quantum Efficiency of 20-nm-Wide GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
- Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- GaInAsP/InP Compressively Strained Quantum-Wire Lasers Fabricated by Electron Beam Lithography and 2-Step Organometallic Vapor Phase Epitaxy
- Anisotropic Polarization Properties of Photoluminescence from GaInAsP/InP Quantum-Wire Structures Fabricated by Two-Step Organometallic Vapor Phase Epitaxy Growth