Arai Shigehisa | Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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概要
関連著者
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
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Arai S
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Physical Electronics Tokyo Institute Of Technology
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Arai I
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Suematsu Yasuharu
Department Of Electronic Engineering Kohgakuin University
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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SUEMATSU Yasuharu
Department of Physical Electronics, Tokyo Institute of Technology
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Suematsu Yasuharu
Department Of Physical Electronics Tokyo Institute Of Technology
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TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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ITAYA Yoshio
Department of Physical Electronics, Tokyo Institute of Technology
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Itaya Yoshio
Department Of Physical Electronics Tokyo Institute Of Technology
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Raj Mothi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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WIEDMANN Jorg
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Wiedmann Jorg
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Asada Masahiro
Department of Neurosurgery, Chibune Hospital
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Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Tamura S
Sony Corp. Yokohama Jpn
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Ravikumar K.g.
Department Of Physical Electronics Tokyo Institute Of Technology
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Ravikumar K.g.
The Advanced Tech. R&d Center Fujikura Ltd.
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KISHINO Katsumi
Department of Engineering and Applied Sciences, Sophia University
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Kishino Katsumi
Department Of Physical Electronics Tokyo Institute Of Technology
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Kishino Katsumi
Department Of Electrical And Electronic Engineering Sophia University
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Asada Masahiro
Department Of Physical Electronics Tokyo Institute Of Technology
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Tamura M
Univ. Tokyo Tokyo Jpn
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Tamura Shin-ichiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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雨宮 智宏
東京大学先端科学技術研究センター
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EBIHARA Koji
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Ebihara Koji
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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雨宮 智宏
東京工業大学 量子ナノエレクトロニクス研究センター
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KIM Hyo-Chang
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Kim H‐c
Seoul National Univ. Seoul Kor
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Kim Hyo-chang
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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KUDO Koji
Department of Physical Electronics, Tokyo Institute of Technology
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TAMURA Munehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Ebihara K
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ravikumar K.
Department Of Physical Electronics Tokyo Institute Of Technology
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TOYOSHIMA Shunsuke
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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SAKA Yoshikazu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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SERIZAWA Naoki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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YASUMOTO Hideo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Toyoshima Shunsuke
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Yasumoto Hideo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Serizawa Naoki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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WATANABE Masahiro
Department of Information Processing, Tokyo Institute of Technology
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Nishida T
Ntt Basic Res. Lab. Kanagawa Jpn
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NUNOYA Nobuhiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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MATSUI Kensuke
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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IZUMI Akira
Japan Advanced Institute of Science and Technology (JAIST)
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Shin K‐c
Department Of Organic And Polymeric Materials Tokyo Institute Of Technology
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Shin Ki-chul
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Gotoh A
Tohoku Univ. Sendai Jpn
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Gotoh Akira
The 2nd Department Of Internal Medicine Shinshu University School Of Medicine
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Gotoh Akira
Tsukuba Research Laboratory Hitachi Maxell Ltd.
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Takata M
Nagaoka Univ. Technology Niigata
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Uchino Akira
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Uchino Akira
Laboratory Of Nutrition Chemistry Department Of Bioscience And Biotechnology Faculty Of Agriculture
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Kudo K
Tokyo Inst. Technol. Tokyo Jpn
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Kudo K
Research Laboratory Of Resources Utilization Tokyo Institute Of Technology
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Nishida T
Nara Inst. Sci. And Technol. Nara Jpn
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Maeda T
Electrotechnical Lab. Tskuba Jpn
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MAEDA Takeshi
Central Research Laboratory, Hitachi, Ltd.
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Kudo Kazuki
Ntt Interdisciplinary Research Laboratories
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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Komori K
Faculty Of Engineering Tokyo Institute Of Technology
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Maeda Toru
Department Of Material Science Graduate School Of Engineering Tohoku Uniiversity
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Takizawa T
Nihon Univ. Tokyo Jpn
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Takizawa T
Department Of Physics College Of Humanities And Sciences Nihon University
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Watanabe Hirohito
Institute Of Material Science University Of Tsukuba
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Matsui K
Sanyo Electric Co. Ltd. Osaka Jpn
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Nishida Tetsuya
Central Research Laboratory Hitachi Ltd.
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Nishida Tetsuya
Central Resarch Laboratory Hitachi Ltd.
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Maeda T
Storage Technology Research Center Research & Development Group Hitachi Ltd.
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Maeda T
Electrotechnical Lab. Ibaraki Jpn
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Maeda Tatsuro
Electrotechnical Laboratory
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Nishida T
Nara Inst. Sci. And Technol. (naist) Nara Jpn
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Watanabe H
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Nishida T
Ntt Basic Research Laboratories
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Nishida Toshio
Ntt Basic Research Laboratories Physical Science Laboratory
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KIKUGAWA Tomoyuki
Anritsu Co.
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SHIMOMURA Kazuhiko
Department of Physical Electronics, Tokyo Institute of Technology
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IZUMI Akira
Department of Physical Electronics, Tokyo Institute of Technology
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OHKI Yoshimasa
Department of Physical Electronics, Tokyo Institute of Technology
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Sugiyama Hisataka
Central Research Laboratory, Hitachi Ltd.
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Horigome Shinkichi
Central Research Laboratory, Hitachi Ltd.
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ARAI Shinichi
Odawara Works, Hitachi Ltd
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SHIGEMATSU Kazuo
Odawara Works, Hitachi Ltd
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WATANABE Hitoshi
Tsukuba research Laboratory, Hitachi Maxell Ltd.
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UBUKATA Akinori
Tsukuba Laboratories, Nippon Sanso Corporation
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Nunoya Nobuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Katayama Shinya
Department Of Physical Electronics Tokyo Institute Of Technology:(present Address)nippon Sheet Glass
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Shigematsu Koji
Central Research Laboratory Mitsui Mining & Smelting Co. Ltd.
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Saitoo Atsushi
Central Research Laboratory Hitachi Ltd.
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Shigematsu K
Faculty Of Education Iwate University
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Sugiyama H
Data Storage Amp Retrieval Systems Division Hitachi Ltd.
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Horigome Shinkichi
Central Research Laboratory Hitachi Ltd.
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Kudo K
Tohoku Univ. Sendai Jpn
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OHKI Yoshio
NTT Advanced Technology Corporation
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Ohki Y
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Izumi A
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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Izumi Akira
Department Of Anatomy Iwate Medical University School Of Medicine
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Matsui Kensuke
Research And Development Division Kurita Water Industries Ltd
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Saka Yoshikazu
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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TAKIZAWA Toshiyuki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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NAGASHIMA Yasuaki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Nagashima Y
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Kojima Tetsuya
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
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HAYAFUNE Yoshinori
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Nakamura M
Institute Of Advanced Material Study And Department Of Molecular Science And Technology Graduate Sch
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NUMATA Kazunori
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Numata Kazunori
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology:matsushita Electronic C
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Numata Kazunori
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Serizawa Naoki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology:(present Address)ntt Da
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Park S
Dongguk Univ. Seoul Kor
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KANJO Hiroshi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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CHEN Bo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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OHTA Masataka
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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SHIM Jong-In
Department of Electronics Engineering, Hanyang University
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Yagi H
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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HIRAYAMA Hideki
Department of Physical Electronics, Tokyo Institute of Technology
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KAWANISHI HIDEO
Department of Internal Medicine, Miki City Hospital
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Choi In-hoon
Department Of Materials Science Korea University
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Lee Keun-sam
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Shim Jong-in
Department Of Electronics Engineering Hanyang University
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Kanjo Hiroshi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ohta M
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ando Toshihiro
Core Research For Evolutional Science And Technology (crest) Japan Science And Technology Corporatio
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Serizawa N
Tokyo Inst. Technol. Tokyo Jpn
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Arai Shigehisa
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Tohmori Yuichi
Department Of Physical Electronics Tokyo Institute Of Technology
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Maeda T
Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn
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MATSUI Ken-ichi
Department of Physics, Faculty of Science, Osaka University
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Ando T
Okayama Prefectural Univ. Okayama Jpn
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Jiang Xiao
Department Of Physical Electronics Tokyo Institute Of Technology
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Jiang Xiao
Department Of Neurosurgery Tokyo Medical And Dental University
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Komori Kazuhiro
Faculty Of Engineering Tokyo Institute Of Technology
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Ando T
School Of Medicine. Yokohama City University
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Tanaka S
International Superconductivity Technol. Center Tokyo Jpn
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WATANABE Masahiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TAMURA Shigeo
Department of Medicine and Clinical Science, Gunma University Graduate School of Medicine
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BACHER Gerd
Technische Physik, Universitat Wurzburg
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Hirayama Hideki
Department Of Physical Electronics Tokyo Institute Of Technology
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SATOO Atsushi
Central Research Laboratory, Hitachi Ltd.
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SAITOO Atsushi
Central Research Laboratory, Hitachi Ltd.
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NAKAMURA Madoka
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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KOJIMA Takashi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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ANDO Toshikazu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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HAMANO Akira
Faculty of Engineering, Tokyo Institute of Technology
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MIYAMOTO Yasuyuki
Faculty of Engineering, Tokyo Institute of Technology
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SUEMATSU Yasuharu
Tokyo Institute of Technology
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KOMORI Kazuhiro
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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PANG Mu-Ting
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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CAO Ming
Department of Physical Electronics, Tokyo Institute of Technology
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SHINGAI Yasushi
Department of Physical Electronics, Tokyo Institute of Technology
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STUBKJAER Kristian
Department of Physical Electronics, Tokyo Institute of Technology
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ADAMS Alfred
Department of Physical Electronics, Tokyo Institute of Technology
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KATAYAMA Shinya
Department of Physical Electronics, Tokyo Institute of Technology
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PARK Seoung
Department of Physics, Hyosung Women's University
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MIYAKE Yasunari
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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Miyake Yasunari
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyake Yasunari
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Park Seoung
Department Of Internal Medicine Chonbuk National University Medical School:airway Remodeling Laborat
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Kawanishi Hideo
Department Of Physical Electronics Tokyo Institute Of Technology
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Hayafune Yoshinori
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
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Adams Alfred
Department Of Physical Electronics Tokyo Institute Of Technology
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Stubkjaer Kristian
Department Of Physical Electronics Tokyo Institute Of Technology
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Park S.
Department Of Physics Dongguk University
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Takeuchi Y
Institute For Materials Research Tohoku University
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Jia Xue-ying
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology :(present Address) Ire
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Cao Ming
Department Of Physical Electronics Tokyo Institute Of Technology
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Bacher Gerd
Technical Physics Wurzburg University
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Oda Manabu
Department Of Geriatric Pharmacology And Therapeutics Graduate School Of Pharmaceutical Sciences Chi
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Hamano Akira
Faculty Of Engineering Tokyo Institute Of Technology
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Pang Mu-ting
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology:harbin Shipb
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Choi In-hoon
Department Of Material Science Korea University
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Choi In-hoon
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology:korea Univer
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Tamura Shigeo
Department Of Medicine And Clinical Science Gunma University Graduate School Of Medicine
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Kojima T
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
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Yasumoto H
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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SHIMIZU Takehiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TAKEUCHI Yasushi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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KUDO Koji
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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UBUKATA Akinori
Technology Division, Tsukuba Laboratory, Nippon Sanso Co.
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ARAI Shigehisa
Technology Division, Tsukuba Laboratory, Nippon Sanso Co.
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NAGASHIMA Yasuaki
Department of Physical Electronics, Tokyo Institute of Technology
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TAMURA Munehisa
Department of Physical Electronics, Tokyo Institute of Technology
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UBUKATA Akinori
Department of Physical Electronics, Tokyo Institute of Technology
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MUGURUMA Hitoshi
Department of Electronic Engineering, Shibaura Institute of Technology
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MURATAKE Shigeki
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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FUJIMOTO Hiromasa
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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SAKAMORI Shigenori
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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KIKUNO Eijiro
Department of Physical Electronics, Tokyo Institute of Technology
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AMIOTTI Marco
Department of Physical Electronics, Tokyo Institute of Technology
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TAKIZAWA Toshiyuki
Department of Physical Electronics, Tokyo Institute of Technology
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Kikuno Eijiro
Department Of Physical Electronics Tokyo Institute Of Technology
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Amiotti Marco
Department Of Physical Electronics Tokyo Institute Of Technology
著作論文
- Highly Uniform 1.5 μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers
- Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser
- Continuous Wave Operation of 1.55 μm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
- Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH_4/H_2-Reactive Ion Etching
- GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/Semiconductor Bragg Reflectors
- Distributed Reflector Lasers with First-Order Vertical Grating and Second-Order Bragg Reflectors
- GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings : Optics and Quantum Electronics
- 1.5-μm-Wavelength Distributed Feedback Lasers With Deeply Etched First-Order Vertical Grating : Optics and Quantum Electronics
- Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-μm-Wavelength Single-Mode Operation
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2-Reactive-Ion-Etching
- Fabrication of GaInAs/InP Quantum Wires by Organometallic-Vapor-Phase-Epitaxial (OMVPE) Selective Growth on Grooved Side Walls of Ultrafine Multilayers
- A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
- Light Emission from Quantum-Box Structure by Current Injection
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
- The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- 1.67 μm Ga_In_As/InP DH Lasers Double Cladded with InP by LPE Technique
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
- Ga_xIn_As_yP_-InP Injection Laser Partially Loaded with Distributed Bragg Reflector
- Intraband Relaxation Time in Compressive-Strained Quantum-Well Lasers
- Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching
- Switching Operation of GaInAs/InP Multiple-Quantum-Well Directional-Coupler-Type All-Optical Switch
- Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- Proposal of Semiconductor Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structures
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- Anisotropic Refractive Index of Porous InP Fabricated by Anodization of (111)A Surface
- Stripe Direction Dependence of Mesa Angle Formed on (100) InP by Selective Etching using HCl Solution
- Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
- 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers
- Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers
- Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
- Fabrication of Vertical and Uniform-Size Porous InP Structure by Electrochemical Anodization
- Novel Structure GaInAsP/InP 1.5-1.6 μm Bundle Integrated-Guide (BIG) Distributed Bragg Reflector Laser
- Dynamic-Single-Mode Semiconductor Lasers : B-2: LD AND LED-1
- Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate