Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-09-05
著者
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KISHINO Katsumi
Department of Engineering and Applied Sciences, Sophia University
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Kishino Katsumi
Department Of Physical Electronics Tokyo Institute Of Technology
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Kishino Katsumi
Department Of Electrical And Electronic Engineering Sophia University
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Arai Shigehisa
Department Of Physical Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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SUEMATSU Yasuharu
Department of Physical Electronics, Tokyo Institute of Technology
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ITAYA Yoshio
Department of Physical Electronics, Tokyo Institute of Technology
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KATAYAMA Shinya
Department of Physical Electronics, Tokyo Institute of Technology
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Suematsu Yasuharu
Department Of Physical Electronics Tokyo Institute Of Technology
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Suematsu Yasuharu
Department Of Electronic Engineering Kohgakuin University
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Katayama Shinya
Department Of Physical Electronics Tokyo Institute Of Technology:(present Address)nippon Sheet Glass
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Itaya Yoshio
Department Of Physical Electronics Tokyo Institute Of Technology
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KISHINO Katsumi
Department of Physical Electronics, Tokyo Institute of Technology
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
関連論文
- Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns
- Highly Uniform 1.5 μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers
- Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser
- Continuous Wave Operation of 1.55 μm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
- Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH_4/H_2-Reactive Ion Etching
- GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/Semiconductor Bragg Reflectors
- Distributed Reflector Lasers with First-Order Vertical Grating and Second-Order Bragg Reflectors
- GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings : Optics and Quantum Electronics
- 1.5-μm-Wavelength Distributed Feedback Lasers With Deeply Etched First-Order Vertical Grating : Optics and Quantum Electronics
- Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-μm-Wavelength Single-Mode Operation
- Growth of Self-Organized GaN Nanostructures on Al_20_3(0001)by RF-Radical Source Molecular Beam Epitaxy
- Two-Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
- Substrate Nitridatiorn Effects on GaN Growm on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
- Zn Induced Layer Disordering in GaInP/AlInP Visible Multi-Quantum Well Distributed Bragg Reflector Laser Diode
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2-Reactive-Ion-Etching
- Fabrication of GaInAs/InP Quantum Wires by Organometallic-Vapor-Phase-Epitaxial (OMVPE) Selective Growth on Grooved Side Walls of Ultrafine Multilayers
- A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
- Light Emission from Quantum-Box Structure by Current Injection
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
- The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- 1.67 μm Ga_In_As/InP DH Lasers Double Cladded with InP by LPE Technique
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
- Ga_xIn_As_yP_-InP Injection Laser Partially Loaded with Distributed Bragg Reflector
- Intraband Relaxation Time in Compressive-Strained Quantum-Well Lasers
- Absorption Coefficient Measurements of MgZnCdSe II-VI Compounds on InP Substrates and Quantum Confined Stark Effect in ZnCdSe/MgZnCdSe Multiple Quantum Wells
- Absorption Coefficient Measurements of MgZnCdSe II-VI Compounds on InP Substrates and Quantum Confined Stark Effect in ZnCdSe/MgZnCdSe Multiple Quantum Wells
- Twin-Guide Laser with Narrow Radiation Angle
- Monolithic Integration of Laser and Amplifier/Detector by Twin-Guide Structure
- Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate Layers
- High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
- New-Type Photocathode for Polarized Electron Source with Distributed Bragg Reflector
- Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching
- CW Operation of 0.67μm GaInAsP/AlGaAs Laser at 208 K Grown on GaAs Substrates by LPE
- Growth and Characterization of ZnCdSe/BeZnTeII-VI Compound Type-II Superlattices on InP Substrates and Their Application for Visible Light Emitting Devices : Semiconductors
- Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy : Semiconductors
- Growth and Characterization of Nitrogen-Doped MgSe/ZnSeTe Superlattice Quasi-Quaternary Oil InP Substrates and Fabrication of Light Emitting Diodes
- Crystal Growth and Characterization of II-VI Compound Light Emitting Diodes with Novel Superlattice Quasi-Quaternary Cladding Layers on InP Substrates
- Substrate Misorientation Effect on Self-Organization of Quantum-Wires in (GaP)m/(InP)m Short Period Binary Superlattices
- Raman Scattering from Interface Phonons in GaInP / AlInP Superlattice
- 600-nm-Range GaInP/AlInP Strained Quantum Well Lasers Grown by Gas Source Molecular Beam Epitaxy
- 600 nm-Range GaInP/AlInP Multi-Quantum-Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GS-MBE)
- Switching Operation of GaInAs/InP Multiple-Quantum-Well Directional-Coupler-Type All-Optical Switch
- Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- Proposal of Semiconductor Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structures
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- Role of Interlayer Electron Hopping for Spin Density Wave State in the Zero-Gap Organic Conductor(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Massless Fermions in Organic Conductor(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Pressure-Induced Zero-Gap Semiconducting State in Organic Conductor α-(BEDT-TTF)_2I_3 Salt(Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Electric Conductivity of the Zero-Gap Semiconducting State in α-(BEDT-TTF)_2I_3 Salt(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Superconductivity in Charge Ordered Metal for Quasi-Two-Dimensional Organic Conductor(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Superconductivity in Charge Ordered Organic Conductor : α-(ET)_2I_3 Salt(Condensed matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Anisotropic Refractive Index of Porous InP Fabricated by Anodization of (111)A Surface
- Theoretical Gain of Quantum-Well Wire Lasers
- GaInAsP/InP Surface Emitting Injection Lasers
- 0.67 μm Room-Temperature Operation of GaInAsP/AlGaAs Lasers on GaAs Prepared by LPE
- Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW Condition
- Stripe Direction Dependence of Mesa Angle Formed on (100) InP by Selective Etching using HCl Solution
- Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions
- Violet and Near-UV Light Emission from GaN/Al_Ga_N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy
- GaInAsP/InP Single Quantum-Well Lasers by OMVPE
- Conditions for OMVPE Growth of GaInAsP/InP Crystal
- Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
- Photopumped Lasing Characteristics in Green-to-Yellow Range for BeZnSeTe II--VI Compound Quaternary Double Heterostructures Grown on InP Substrates
- 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers
- InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate
- Single Transverse Mode Operation of Terraced Substrate GaInAsP/InP Lasers at 1.3μm Wavelength
- Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers
- Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding
- Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
- Temperature Characteristics of a GaAs-AlGaAs Integerated Twin Guide Laser with Distributed Bragg Reflectors
- GaInAsP/InP Integrated Twin-Guide Lasers with First-Order Distributed Bragg Reflectors at 1.3 μm Wavelength
- Fabrication of Vertical and Uniform-Size Porous InP Structure by Electrochemical Anodization
- Measurement of Zn Doping Level in InGaAsP/InP DH Lasers
- Novel Structure GaInAsP/InP 1.5-1.6 μm Bundle Integrated-Guide (BIG) Distributed Bragg Reflector Laser
- Optically Pumped Green (530-560nm) Stimulated Emissions from InGaN/GaN Multiple-Quantum-Well Triangular-Lattice Nanocolumn Arrays
- 671 nm GaInAsP/AlGaAs Visible DFB Lasers with Ridge-Waveguide Structure Grown by LPE
- Selective-Area Growth of GaN Nanocolumns on Si(111) Substrates Using Nitrided Al Nanopatterns by RF-Plasma-Assisted Molecular-Beam Epitaxy
- Dynamic-Single-Mode Semiconductor Lasers : B-2: LD AND LED-1
- An Approximate Analysis of Gain Suppression in Injection Lasers for Band-to-Band and Band-to-Impurity-Level Transitions
- (Invited) Theory of Single Mode Injection Lasers Taking Account of Electronic Intra-band Relaxation : B-4: LASERS (1)
- Experimental Studies on the Limitation of Focussing Power of Hyperbolic-Type Gas Lens
- Room-Temperature Continuous-Wave Operation of 1.3-μm Transistor Laser with AlGaInAs/InP Quantum Wells
- Near-Infrared InGaN Nanocolumn Light-Emitting Diodes Operated at 1.46μm
- Confinement of Optical Phonons Observed by Raman Scattering in GaN/AlN Multiple Quantum Disk Nanocolumns
- Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors
- Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate
- Preliminary Experiment on Direct Media Conversion from a 1.55 μm Optical Signal to a Sub-Terahertz Wave Signal Using Photon-Generated Free Carriers
- Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors
- Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions