InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate
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概要
- 論文の詳細を見る
GaN-nanocolumn-based InGaN/GaN multiple quantum disk (MQD) light-emitting diodes (LEDs) with a novel columnar structure were fabricated on n-type (111) Si substrates. The n-GaN and InGaN/GaN MQD active region had isolated columnar structures, while the diameters were gradually increased in the p-GaN region by controlling the growth conditions. Consequently, the nanocolumn LED had a continuous surface without chasms. This novel structure enables p-type electrodes to be fabricated by the conventional method on top of nanocolumn devices while keeping the superior optical properties of the isolated nanocolumn active region. The nanocolumn LED showed clear rectifying behavior with a typical turn-on voltage of 2.5–3.0 V at room temperature. Electroluminescence was observed through semitransparent electrodes with various emission colors from green (530 nm) to red (645 nm).
- Japan Society of Applied Physicsの論文
- 2004-12-01
著者
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Kikuchi Akihiko
Department Of Obstetrics Center For Perinatal Medicine Nagano Children's Hospital
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Kikuchi Akihiko
Department Of Electrical And Electronics Engineering Sophia University
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KISHINO Katsumi
Department of Engineering and Applied Sciences, Sophia University
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Kishino Katsumi
Department Of Electrical And Electronics Engineering Sophia University
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Kishino Katsumi
Department Of Electrical And Electronic Engineering Sophia University
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TADA Makoto
Department of Fermentation Technology, Faculty of Engineering, Hiroshima University
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Tada Makoto
Department Of Electrical And Electronics Engineering Sophia University
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Kawai Mizue
Department of Electrical and Electronics Engineering, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, T
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Kawai Mizue
Department Of Electrical And Electronics Engineering Sophia University
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Kikuchi Akihiko
Department of Applied Chemistry, Faculty of Engineering, Osaka City University
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