Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1978-11-05
著者
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KISHINO Katsumi
Department of Engineering and Applied Sciences, Sophia University
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Kishino Katsumi
Department Of Physical Electronics Tokyo Institute Of Technology
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Kishino Katsumi
Department Of Electrical And Electronic Engineering Sophia University
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Arai Shigehisa
Department Of Physical Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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SUEMATSU Yasuharu
Department of Physical Electronics, Tokyo Institute of Technology
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ITAYA Yoshio
Department of Physical Electronics, Tokyo Institute of Technology
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Suematsu Yasuharu
Department Of Physical Electronics Tokyo Institute Of Technology
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Suematsu Yasuharu
Department Of Electronic Engineering Kohgakuin University
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Katayama Shinya
Department Of Physical Electronics Tokyo Institute Of Technology:(present Address)nippon Sheet Glass
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Itaya Yoshio
Department Of Physical Electronics Tokyo Institute Of Technology
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KISHINO Katsumi
Department of Physical Electronics, Tokyo Institute of Technology
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
関連論文
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