Violet and Near-UV Light Emission from GaN/Al_<0.08>Ga_<0.92>N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
GaN/Al_<0.08>Ga_<0.92>N double-heterostructure (DH) was grown on (0001)-oriented 6H-SiC substrate by low-pressure metal-organic vapor phase epitaxy (LP MO-VPE). The main peak wavelength at room temperature from GaN/Al_<0.08>Ga_<0.92>N DH injection diode was 420 nm which originated in the band-to-impurity transition in GaN. A weak peak at 360 nm was also observed.
- 社団法人応用物理学会の論文
- 1995-08-15
著者
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KAWANISHI HIDEO
Department of Internal Medicine, Miki City Hospital
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SUEMATSU Yasuharu
Department of Physical Electronics, Tokyo Institute of Technology
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Kawanishi Hideo
Department Of Electonic Engineering Kogakuin University
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Suematsu Yasuharu
Department Of Electronic Engineering Kohgakuin University
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Shirai Toshiyuki
Advanced Research Center For Beam Science Institute For Chemical Research Kyoto University
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KUGA Yuichiro
Department of Electronic Engineering, Kohgakuin University
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SHIRAI Toshio
Department of Electronic Engineering, Kohgakuin University
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HARUYAMA Makiko
Department of Electronic Engineering, Kohgakuin University
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Kawanishi Hideo
Department Of Cardiology Himeji Cardiovascular Center
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Sugimura Takashi
Nuclear Science Research Facility Institute For Chemical Research Kyoto University
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Kuga Yuichiro
Department Of Electronic Engineering Kohgakuin University
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Shirai T
Advanced Research Center For Beam Science Institute For Chemical Research Kyoto University
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Haruyama Makiko
Department Of Electronic Engineering Kohgakuin University
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