Fine Epitaxial Growth of Monolayer-Stepped GaInAs/InP Quantum Wells by Metalorganic Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
A possibility of monolayer-stepped GaInAs/InP multiple quantum wells was demonstrated by metalorganic molecular beam epitaxy (MOMBE). The 4.2 K PL spectra of these structures showed quantized energy shift which increased stepwise with decreasing growth time of the GaInAs well. The maximum energy shift was 0.467 eV for GaInAs growth time of 3 s, and the energy shift corresponded to 2-monolayer GaInAs quantum welts, by contrast with the calculated energy shift.
- 社団法人応用物理学会の論文
- 1991-01-15
著者
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KAWANISHI HIDEO
Department of Internal Medicine, Miki City Hospital
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Kawanishi Hideo
Department Of Electronic Engineering Kohgakuin University
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Ikeda Hirokazu
Department Of Physics University Of Tokyo
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Kawanishi Hideo
Department Of Cardiology Himeji Cardiovascular Center
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Ikeda Hirokazu
Department Of Electronic Engineering Kohgakuin University
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