Tensile Strain Introduced in AlN Layer Grown by Metal-Organic Vapor-Phase Epitaxy on (0001) 6H-SiC with (GaN/AlN) Buffer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-05-15
著者
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Ishihara Yoshiyuki
Department of Cardiology, Gifu University School of Medicine
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KAWANISHI HIDEO
Department of Internal Medicine, Miki City Hospital
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SHIBATA Masao
Department of Health, Aichi Gakuin University, College of General Education
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HONDA Tohru
Department of Electronic Engineering, Kohgakuin University
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KURIMOTO Makoto
Department of Electronic Engineering, Kohgakuin University
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Honda T
Japan Advanced Inst. Sci. And Technol. Ishikawa Jpn
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Honda Tohru
Department Of Electronic Engineering Kogakuin University
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Kurimoto Makoto
Department Of Electronic Engineering Kohgakuin University
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NAKADA Toshiyuki
Department of Electronic Engineering, Kohgakuin University
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Kawanishi H
Department Of Electronic Engineering Kohgakuin University
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Nakada Toshiyuki
Department Of Electronic Engineering Kohgakuin University
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Kawanishi Hideo
Department Of Cardiology Himeji Cardiovascular Center
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Ishihara Yoshiyuki
Department Of Adaptive Machines Systems Graduate School Of Engineering Osaka University
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Shibata Masao
Department Of Electronic Engineering Kohgakuin University
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SHIBATA Masao
Department of Electronic Engineering, Kohgakuin University
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Honda Tohru
Department of Electronic Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Hachiohji, Tokyo 192-0015, Japan
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