Fabrication of Red, Green, and Blue Pixels Using Integrated GaN-Based Schottky-Type Light-Emitting Diodes
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概要
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GaN-based UV Schottky-type (ST) LEDs were fabricated using GaN layers grown by molecular beam epitaxy (MBE). Red, green, and blue (RGB) pixels were fabricated using the UV-LEDs and RGB phosphors. Surface modification led to the reduction in reverse-bias leakage current and improved forward-bias characteristics. It was found that the ideality factor, n, was improved with increasing breakdown voltage in the reverse-bias range. We believe that the improvement is due to the reduced number of threading-dislocation (TD)-related leakage paths. The effect of the point defects around the TDs on light emission was reduced by the surface modification because the number of current paths around the TDs was reduced.
- 2013-08-25
著者
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Yamaguchi Tomohiro
Department Of Applied Chemistry Faculty Of Engineering Kumamoto University
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Fujioka Shuhei
Department of Electronic Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Hachiohji, Tokyo 192-0015, Japan
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Sugiura Yohei
Department of Electronic Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Hachiohji, Tokyo 192-0015, Japan
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Honda Tohru
Department of Electronic Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Hachiohji, Tokyo 192-0015, Japan
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Sakai Naoyuki
Department of Electronic Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Hachiohji, Tokyo 192-0015, Japan
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