Reduction of Threading Dislocations in AlGaN/AlN/SiC Epitaxial Layers by Controlled Strain with (AlN/GaN) Multibuffer-Layer Structure
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概要
- 論文の詳細を見る
AlGaN/AlN layers were grown on SiC substrates with an (AlN/GaN) multibuffer-layer structure (MBLS). The tensile strain in the $a$-axis of the grown layer was controlled by changing the structure of the (AlN/GaN) MBLS. It was found that the crystal quality of the grown layers was improved by increasing the strain. It was also confirmed by transmission electron microscopy (TEM) observation that the dislocation density of the AlN layer decreased with increase of the tensile strain in the $a$-axis. The screw dislocations decreased more rapidly with the distance from the substrate for the same tensile strain than the edge dislocations did.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-06-15
著者
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Hasegawa Fumio
Department Of Technology Meiji University
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Kawanishi Hideo
Department Of Cardiology Himeji Cardiovascular Center
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Niikura Eiichirou
Department of Electronic Engineering, Kogakuin University, 2665-1 Nakanno-machi, Hachioji, Tokyo 192-0015, Japan
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Murakawa Kouichi
Department of Electronic Engineering, Kogakuin University, 2665-1 Nakanno-machi, Hachioji, Tokyo 192-0015, Japan
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Kawanishi Hideo
Department of Electronic Engineering, Kogakuin University, 2665-1 Nakanno-machi, Hachioji, Tokyo 192-0015, Japan
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Hasegawa Fumio
Department of Electronic Engineering, Kogakuin University, 2665-1 Nakanno-machi, Hachioji, Tokyo 192-0015, Japan
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