Relationship between Excess Ga and Residual Oxides in Amorphous GaN Films Deposited by Compound Source Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Amorphous GaN (a-GaN) films were deposited at a low temperature below 500°C by compound-source molecular beam epitaxy (CS-MBE). The relationship between excess Ga and its oxidation in the deposited GaN films is reported. X-ray photoelectron spectroscopy (XPS) revealed that the excess Ga in deposited films was oxidized in the air and converted to gallium oxide. By increasing the substrate temperature, the total amount of gallium oxide in the deposited films decreased due to the reduction of the excess Ga. Cathodoluminescence (CL) intensity from the UV to the blue spectral regions increased with as the amount of gallium oxide in the deposited films decreased.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-12-15
著者
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Sugimoto Koichi
Department Of Cardiology And Hematology Fukushima Medical University
-
Egawa Shinichi
Department Of Electronic Engineering Kogakuin University
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Honda Tohru
Department Of Electronic Engineering Kogakuin University
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OBINATA Naoyuki
Department of Electronic Engineering, Kogakuin University
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IJIMA Kazuyuki
Department of Electronic Engineering, Kogakuin University
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ISHIBIKI Masaya
Department of Electronic Engineering, Kogakuin University
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Kawanishi Hideo
Department Of Cardiology Himeji Cardiovascular Center
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Honda Tohru
Department of Electronic Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
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Kawanishi Hideo
Department of Electronic Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
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SUGIMOTO Koichi
Department of Aeronautics and Astronautics, Faculty of Engineering Kyushu University
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Obinata Naoyuki
Department of Electronic Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
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Egawa Shinichi
Department of Electronic Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
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Ijima Kazuyuki
Department of Electronic Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
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Ishibiki Masaya
Department of Electronic Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
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Honda Tohru
Department of Electronic Engineering and Electronics, Graduate School of Engineering, Kogakuin University, Hachiohji, Tokyo 192-0015, Japan
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Sugimoto Koichi
Department of Electronic Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
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