Sub-100 nm Patterning of GaAs Using In Situ Electrom Beam Lithography
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-09-15
著者
-
Ishikawa T
Riken Harima Institute
-
Ishikawa T
National Space Dev. Agency Of Japan Ibaraki Jpn
-
Ishikawa T
Kyushu Univ. Fukuoka Jpn
-
TANAKA Nobuyuki
The Kochi Prefectural Makino Botanical Garden
-
Tanaka N
Environmental Sci. Res. Niigata Niigata Jpn
-
Ishikawa Tetsuya
Riken Harima Institute
-
Kawanishi Hideo
Department Of Electonic Engineering Kogakuin University
-
Ishikawa Tomonori
Fujitsu Limited
-
Ishikawa Tomonori
Optoelectronics Technology Research Laboratory
-
Ishikawa Takatoshi
Department Of Applied Physics Faculty Of Science Fukuoka University
-
TANAKA Nobuyuki
Optoelectronics Technology Research Laboratory
-
SUGIMOTO Yoshimasa
Optoelectronics Technology Research Laboratory
-
Kawanishi H
Department Of Electronic Engineering Kohgakuin University
-
KAWANISHI Hidenori
Optoelectronics Technology Research Laboratory
-
Sugimoto Y
Department Of Research And Development Nichia Chemical Industries Ltd
-
Tanaka N
The Kochi Prefectural Makino Botanical Garden
関連論文
- Field Induced Lattice Deformation in the Quantum Antiferromagnet SrCu_2(BO_3)_2
- Magnetization Process and the Associated Lattice Deformations in an Intermetallic Compound Gd_5Ge_3(Condensed matter : electronics structure and electrical, magnetic, and optical properties)
- Lattice Deformations Induced by an Applied Magnetic Field in the Frustrated Antiferromagnet HgCr_2O_4(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Lattice Distortion in Antiferromagnetic CoO under High Magnetic Fields
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Hard X-ray Photoemission Spectroscopy of Temperature-Induced Valence Transition in EuNi_2(Si_Ge)_2(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Study on the Si(111) √×√ - Ag Surface Structure by X-Ray Diffraction : Surfaces, Interfaces and Films
- Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
- GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth : Semiconductors and Semiconductor Devices
- Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
- 27aRF-11 High-energy x-ray photoemission study of CeRhAs : Observation of the hybridization gap
- Arrhythmia in Young Patients with Mitral Valve Prolapse : THE 8TH CONFERENCE ON PRVENTION FOR RHEUMATIC FEVER AND RHEUMATIC HEART DISEASE
- Interference of Nuclear Bragg Scattered X-Rays in X-Ray Interferometer with Large Optical Path Difference
- Time Domain Interferometry in X-Ray Region Using Nuclear Resonant Scattering
- Time-Delayed Interferometry with Nuclear Resonant Scattering of Synchrotron Radiation
- Flux Growth and Characterization of α-^Fe_2O_3 Single Crystals for Nuclear Bragg Scattering Optical Components
- X-Ray Standing Wave Analysis of GaAs/Si Interface
- Focusing Properties of a Linear-Phase Bragg-Fresnel Lens
- A Plane Wave Diffraction on an Amplitude-Phase Laue Microinterferometer
- X-Ray Standing Wave Analysis of Al/GaAs/Si(111)
- High-Resolution Measurements of Nuclear Bragg Scattering from a Synthetic α-^Fe_2O_3 Crystal
- An X-Ray Phase Plate Using Bragg-Case Diffraction
- 1P127 1D1310 長いゲノムDNAはどのようにして染色体の中に折り畳まれているのか?(核酸-構造・物性,口頭発表,第48回日本生物物理学会年会)
- First Application of X-ray Refraction-based Computed Tomography to a Biomedical Object(Physiology)
- Measurement of Local Lattice Distortion in Silicon by Imaging-Plate Plane-Wave X-Ray Topography with Image Magnification
- Time-Resolved X-Ray Diffraction Measurement of Silicon Surface during Laser Irradiation under Grazing-Incidence Conditions
- Novel Analysis System of Imaging-Plate Plane-Wave X-Ray Topography for Characterizing Lattice Distortion in Silicon
- Switching of Photon Helicities in the Hard X-Ray Region with a Perfect Crystal Phase Retarder
- Time-Resolved X-Ray Diffraction from a Silicon Crystal Irradiated by a Q-Switched Nd:YAG Laser : Condensed Matter
- X-Ray Standing Wave Method Applied to the Characterization of InGaAsP Alloy Semiconductor Thin Film
- Observation of X-Ray Diffraction Spots from the (√×√)R30°Bi Structure on the Si(111) Surface under the Condition of Large Incidence Angle
- Structure Analysis of the NiSi_2/(111)Si Interface by the X-Ray Standing Wave Method
- A new Erythrina alkaloid from Erythrina herbacea
- Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
- The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
- Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
- Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
- Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
- Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
- Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
- Study of 4p Electronic States Related to Magnetic Phase Transition in Mn_3MC (M=Zn and Ga) by X-ray Magnetic Circular Dichroism(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
- A Long-term Follow-up Study of Acute Myocarditis an Electrocardiographic and Echocardiographic Study : THE 8TH CONFERENCE ON PRVENTION FOR RHEUMATIC FEVER AND RHEUMATIC HEART DISEASE
- VENTRICULAR ARRHYTHMIA AND SUDDEN DEATH IN HYPERTROPHIC CARDIOMYOPATHY : Cardiomyopathy (II) : 46th Annual Scientific Meeting, Japanese Circulation Society
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- Transmission-Type X-Ray Phase Retarder Using Ge Crystal in Laue Diffraction Geometry
- Synchrotron Plane Wave X-Ray Topography of 6 inch Diameter Si Crystal
- Generation Rule of the Slip Dislocation in LEC GaAs Crystal
- The Effect of Reduction of Dislocation Density on the Lattice Distortions in Undoped GaAs Single Crystal Grown by LEC Method
- Synchrotron Plane Wave X-Ray Topography of GaAs with a Separate (+, +) Monochro-Collimator
- X-Ray Topography Examination of Lattice Distortions in LEC-Grown GaAs Single Crystals
- Structural Analysis of the NiSi_2/(111)Si Interface by the X-Ray Standing-Wave Method
- Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
- Monolithic Integration of Laser and Amplifier/Detector by Twin-Guide Structure
- Effects of GaAs-Surface Roughness on the Electron-Beam Patterning Characteristics of a Surface-Oxide Layer
- In Situ Fabrication of Buried GaAs/AlGaAs Quantum-Well Mesa-Stripe Structures with Improved Regrown Interfaces
- In situ Electron-beam Processing for GaAs/AlGaAs Nano-structures
- Improvement in Patterning Characteristics of GaAs Oxide Mask Used in In Situ Electron-Beam Lithography
- In Situ GaAs Patterning and Subsequent Molecular-Beam Epitaxial Regrowth of AlGaAs/GaAs Wire Structures
- Electron Beam Patterning Mechanism of GaAs Oxide Mask Layers Used in In Situ Electron Beam Lithography
- Cathodoluminescence of Wirelike GaAs/AlAs Quantum Well Structures Grown on Substrates Patterned with [001] Mesa Stripes
- Characterization of In Situ Cl_2-Etched GaAs Buffer Layers and Regrown GaAs/AlGaAs Quantum Welts
- Band-Gap Energy and Effecive Mass of BGaN
- Dependence of Crystal Quality on Residual Strain in Strain-Controlled Thin AlN Layer Grown by Metalorganic Vapor Phase Epitaxy
- Helicity-Modulation Technique Using Diffractive Phase Retarder for Measurements of X-ray Magnetic Circular Dichroism
- Laue-Case Plane Wave Topography Using Synchrotron Radiation to Reveal Microdefects in a Thinned Silicon Crystal
- Observation of Microdefects in Thin Silicon Crystals by Means of Plane-Wave Topography Using Synchrotron X-Radiation
- Thermal Effect of Picosecond-Pulsed Laser Irradiation on Cl-Adsorbed Si(111) Surface
- Thermal Desorption Process of Bromide on Si(111) Studied by Highly Sensitive Mass Spectroscopy
- Improved Theory for Carrier Leakage and Diffusion in Multiquantum-well Semiconductor Lasers
- Strained Layer Multiquantum Barriers with Improved Carrier Injection and Confinement
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
- Sub-100 nm Patterning of GaAs Using In Situ Electrom Beam Lithography
- Photoluminescence Study of Electron-Beam-Induced Damage in GaAs/AlGaAs Quantum-Well Structures
- Role of an Electron Beam in the Modification of a GaAs Oxide Mask for in situ EB Lithography
- Dimorphism of Pollen Grains and Stigmas in the Heterostylous Subshrub, Reinwardtia indica (Linaceae) in Myanmar
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
- Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures
- Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
- Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures
- Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling
- Femtosecond Snapshot Holography with Extended Reference Using Extreme Ultraviolet Free-Electron Laser
- Raman Spectrum of Selenium Dissolved in an Aqueous Solution of Sodium Sulfide
- Raman Spectra of Rhombohedral and α-Monoclinic Selenium under High Hydrostatic Pressure
- Low-Pressure Measurement Using an Ultrasonic Sensor II
- Response Time-Shortened Zinc Oxide Scintillator for Accurate Single-Shot Synchronization of Extreme Ultraviolet Free-Electron Laser and Short-Pulse Laser
- Roughening Surface of Layered Manganite La0.5Sr1.5MnO4 by Scanning Tunneling Microscopy
- Field Induced Lattice Deformation in a Quasi-One-Dimensional Antiferromagnet BaCo2V2O8
- 1C1348 長いDNAはどのようにして染色体の中に折り畳まれているのか?(核酸,第49回日本生物物理学会年会)
- Photoemission Evidence for Valence Fluctuations and Kondo Resonance in YbAl2
- Scanning Tunneling Microscopy Combined with Hard X-ray Microbeam of High Brilliance from Synchrotron Radiation Source
- Intrinsic Valence Band Study of Molecular-Beam-Epitaxy-Grown GaAs and GaN by High-Resolution Hard X-ray Photoemission Spectroscopy
- Time-Resolved Pump and Probe Experiment for Wide-Gap Semiconductors Using Free Electron Laser and Synchronously-Operated Femtosecond Laser
- Thermal Effect of Picosecond-Pulsed Laser Irradiation on Cl-Adsorbed Si(111) Surface
- Vacuum Ultraviolet Fluorescence Spectroscopy of Nd^:LaF_3 Using Femtosecond Extreme Ultraviolet Free Electron Laser