Sugimoto Y | Department Of Research And Development Nichia Chemical Industries Ltd

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概要

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著作論文

Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
650 nm AlGaInP Visible Light Laser Diode with Dry-Etched Mesa Stripe
Thermal Analysis of Laser-Emission Surface-Normal Optical Devices with a Vertical Cavity
Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application
Uniformity Improvement of Optical and Electrical Characteristics in Integrated Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity
Record Low Threshold Current in Microcavity Surface-Emitting Laser
Chlorine-Based Smooth Reactive Ion Beam Etching of Indium-Containing III-V Compound Semiconductor
GaAs Surface Cleaning/Etching Using Plasma-Dissociated Cl Radical
Smooth and Vertical InP Reactive Ion Beam Etching with Cl_2 ECR Plasma
Selective Area Epitaxy of GaAs Using GaAs Oxide as a Mask
Fine Pattern Formation of Gallium Arsenide by In Situ Electron-Beam Lithography Using an Ultrathin Surface Oxide as a Resist
Electron-Beam-Induced Cl_2 Etching of GaAs
High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
Sub-100 nm Patterning of GaAs Using In Situ Electrom Beam Lithography
Role of an Electron Beam in the Modification of a GaAs Oxide Mask for in situ EB Lithography

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