Kobayashi Kenichi | Opto-electronics Research Laboratories Nec Corporation

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著作論文

Novel Window-Structure AlGaInP Visible-Light Laser Diodes with Non-Absorbing Facets Fabricated by Utilizing GaInP Natural Superlattice Disordering
Silicon and Selenium Doping Effects on Band-Gap Energy and Sublattice Ordering in Ga_In_P Grown by Metalorganic Vapor Phase Epitaxy
Nonexistence of Long-Range Order in Ga_In_P Epitaxial Layers Grown on (111)B and (110) GaAs Substrates : Semiconductors and Semiconductor Devices
Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
High Aluminum Composition AlGaInP Grown by Metalorganic Chemical Vapor Deposition : Impurity Doping and 590 nm (Orange) Electroluminescence
650 nm AlGaInP Visible Light Laser Diode with Dry-Etched Mesa Stripe
632.7 nm CW Operation (20℃) of AlGaInP Visible Laser Diodes Fabricated on (001) 6°off toward [110] GaAs Substrate
VPE-Grown 1.3 μm InGaAsP/InP Double-Channel Planar Buried-Heterostructure Laser Diode with LPE-Burying Layers

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