Silicon and Selenium Doping Effects on Band-Gap Energy and Sublattice Ordering in Ga_<0.5>In_<0.5>P Grown by Metalorganic Vapor Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-08-20
著者
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Suzuki T
Free Electron Laser Research Institute Inc.
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Suzuki T
Taiyo Yuden Co. Ltd. Gunma Jpn
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Kawata S
Nikon Corp. Saitama Jpn
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Suzuki T
Nhk (japan Broadcasting Corp.) Tokyo
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Suzuki Tatsuro
Department Of Electrical Engineering Shizuoka University
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Kobayashi K
Kobe Steel Ltd. Kobe Jpn
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Hotta Hitoshi
Opto-electronics Research Laboratories Nec Corporation
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Hotta Hitoshi
Department Of Physics Faculty Of Science Tokyo Institute Of Technology
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GOMYO Akiko
Opto-Electronics Research Laboratories, NEC Corporation
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HINO Isao
Opto-Electronics Research Laboratories, NEC Corporation
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SUZUKI Tohru
Opto-Electronics Research Laboratories, NEC Corporation
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KOBAYASHI Kenichi
Opto-Electronics Research Laboratories, NEC Corporation
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KAWATA Seiji
Opto-Electronics Research Laboratories, NEC Corporation
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Gomyo A
Nec Corp. Ibaraki Jpn
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Gomyo Akiko
Fundamental And Environmental Research Laboratories Nec Corporation:optoelectronic Industry And Tech
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Gomyo Akiko
Single Quantum Dot Project Erato Japan Science & Technology Corporation (jst) C
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Gomyo Akiko
Opto-electronics Research Laboratories Nec Corporation
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Kawata Seiji
Opto-electronics Research Laboratories Nec Corporation
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Hino I
Opto-electronics Research Laboratories Nec Corporation
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Hino Isao
Opto-electronics Research Laboratories Nec Corporation
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Suzuki T
Tdk Corp. Chiba Jpn
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Suzuki Tohru
Opto-electronics And High-frequency Device Research Laboratories Nec Corporation
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Kobayashi Kenichi
Opto-electronics Research Laboratories Nec Corporation
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