P-Type Doping Effects on Band-Gap Energy for Ga_<0.5>In_<0.5>P Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-08-20
著者
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Kawata S
Nikon Corp. Saitama Jpn
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Kobayashi K
Kobe Steel Ltd. Kobe Jpn
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GOMYO Akiko
Opto-Electronics Research Laboratories, NEC Corporation
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IIJIMA Sumio
Fundamental Research Laboratories, NEC Corporation
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HINO Isao
Compound Semiconductor Device Division, NEC Corporation
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Iijima S
Fundamental Research Laboratories Nec Corporation
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Iijima Sumio
Fundamental Research Laboratories Nec Corporation
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Gomyo A
Nec Corp. Ibaraki Jpn
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Gomyo Akiko
Fundamental And Environmental Research Laboratories Nec Corporation:optoelectronic Industry And Tech
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Gomyo Akiko
Single Quantum Dot Project Erato Japan Science & Technology Corporation (jst) C
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Gomyo Akiko
Opto-electronics Research Laboratories Nec Corporation
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Kawata Seiji
Opto-electronics Research Laboratories Nec Corporation
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Hino I
Opto-electronics Research Laboratories Nec Corporation
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SUZUKI Kenichi
Opto-Electronics Research Laboratories, NEC Corporation
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KOBAYASHI Kenichi
Compound Semiconductor Device Devision, NEC Corporation
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KAWATA Seiji
Compound Semiconductor Device Devision, NEC Corporation
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Suzuki Kenichi
Opto-electronics Research Laboratories Nec Corporation
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