A New Atmospheric Pressure Ionization Mass Spectrometer for the Analysis of Trace Gas Impurities in Silicon Source Gases used for Semiconductor Fabrication

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-01-15

著者

• Iijima S

  Fundamental Research Laboratories Nec Corporation

• Iijima Sumio

  Fundamental Research Laboratories Nec Corporation

• Irie T

  Kyoto Univ. Kyoto Jpn

• Iijima Shimpei

  Central Research Laboratory Hitachi Ltd.

• MITSUI Yasuhiro

  Central Research Laboratory, Hitachi Ltd.

• IRIE Takashi

  Central Research Laboratory, Hitachi Ltd.

• Mitsui Y

  Semiconductor & Integrated Circuits Division Hitachi Ltd.

• MIZOKAMI Kazuaki

  Precision Center, Hitachi Tokyo Electronics Co., Ltd.

• KURIYAMA Katsumi

  Sales and Marketing Division, Hitachi Tokyo Electronics Co., Ltd.

• Kuriyama Katsumi

  Sales And Marketing Division Hitachi Tokyo Electronics Co. Ltd.

• Mizokami Kazuaki

  Precision Center Hitachi Tokyo Electronics Co. Ltd.

関連論文

• Large (6°) Off-Angle Effects on Sublattice Ordering and Band-Gap Energy in Ga_In_P Grown on (001) GaAs Substrates
• Nonexistence of Long-Range Order in Ga_In_P Epitaxial Layers Grown on (111)B and (110) GaAs Substrates : Semiconductors and Semiconductor Devices
• Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
• P-Type Doping Effects on Band-Gap Energy for Ga_In_P Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
• Nitrogen Distribution and Chemical Bonding State Analyses in Oxynitride Film by Spatially Resolved Electron Energy Loss Spectroscopy (EELS)
• Two-Dimensional Boron Analysis in Borophosphosilicate Glass Film Using Transmission Electron Microscope with Imaging Filter
• Influence of Oxygen upon Radiation Durability of SiN X-Ray Mask Membranes : Lithography Technology
• Influence of Oxygen upon Radiation Durability of SiN X-ray Mask Membranes
• The Study of Ultrathin Tantalum Oxide Films before and after Annealing with X-Ray Photoelectron Spectroscopy
• Metal-Complex Ferrimagnets with the Formula {NBu_4[M(II)Fe(III)(ox)_3]}_(NBu_4^+=Tetra(n-butyl)ammonium Ion, ox^=Oxalate Ion, M=Fe^, Ni^)
• A Top-Gate Carbon-Nanotube Field-Effect Teansistor with a Titanium-Dioxide Insulator
• The Effect of Isopropyl Alcohol Adsorption on the Electrical Characteristics of Thin Oxide
• The Effect of IPA Adsorption on Thin Oxide
• Quantitative Analysis of Trace Water in Monosilane Gas Using Atmospheric-Pressure Ionization Mass Spectrometer with Bicompartment Ion Source
• Quantitative Analysis of Trace Water in Highly Puified Nitrogen Gas by Atmospheric Pressure Ionization Mass Spectrometer
• A New Atmospheric Pressure Ionization Mass Spectrometer for the Analysis of Trace Gas Impurities in Silicon Source Gases used for Semiconductor Fabrication
• Quantitative Analysis of Trace Hydrogen in Highly Purified Nitrogen Gas Using Rapid Reactions in Atmospheric Pressure Ionization Mass Spectrometer
• A Drift Tube for Monitoring ppb Trace Water
• Magnetic Susceptibility of Some Mixed-Metal Compounds : NBu_4Zn(II)_xFe(II)_[Fe(III)(ox)_3]
• Modulated Structures in Superconductor Tl-Ba-Ca-Cu-O Oxides: Crystal Structure of Tl_2Ba_2CuO_ Phase : Electrical Properties of Condensed Matter
• Intergrowth Structures in Superconductor Tl-Ba-Ca-Cu-O Oxides : Electrical Properties of Condensed Matter
• Crystal Structure Variations due to Multiplicity in CuO_2-Ca-CuO_2 Slabs in Superconductive Tl-Ba-Ca-Cu-O Oxides : Electrical Properties of Condensed Matter
• "Incipient Orthorhombic" Phase in Ba_2YCu_3O_ Ctystals : Electrical Properties of Condensed Matter
• Orthorhombic-II Phase in Ba_2YCu_3O_ Crystals : Electrical Properties of Condensed Matter
• Incipient Twinning in Ba_2YCu_3O_ Crystals
• Twinning of High-T_c Ba_2YCu_3O_ Oxides
• Crystal Growth Faults in Superconductor Tl-Ba-Ca-Cu-O Oxide Crystals : Condensed Matter
• Structural Variations on Superconductor Tl-Ba-Ca-Cu-O Oxides : Electrical Properties of Condensed Matter
• Carbon-Nanotube Field-Effect Transistors with Very High Intrinsic Transconductance
• Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation

もっと見る 閉じる

スポンサーリンク