Quantitative Analysis of Trace Hydrogen in Highly Purified Nitrogen Gas Using Rapid Reactions in Atmospheric Pressure Ionization Mass Spectrometer
スポンサーリンク
概要
- 論文の詳細を見る
Quantitative analysis of trace hydrogen in highly purified nitrogen gas for the semiconductor fabrication process was investigated using an atmospheric pressure ionization mass spectrometer (APIMS). A previous method wherein the sample gas is directly introduced into the APIMS is not capable of providing high-sensitivity measurements for hydrogen in nitrogen gas. By mixing 20% argon gas with the sample gas, the sensitivity was increased to ten times that of the previous method. This is due to the occurrence of a previously unreported rapid reaction through which the quantity of hydrogen tons is increased: (N_2Ar)^++H_2→N_2H^++H+Ar. The detection limit in this method and the rate constant for this reaction were estimated to be 40 ppt and 1.4×10^<-10> molecule^<-1>cm^3s^<-1>, respectively.
- 社団法人応用物理学会の論文
- 1993-06-15
著者
-
Irie T
Kyoto Univ. Kyoto Jpn
-
Saiki A
Tokyo Inst. Technol. Tokyo Jpn
-
Okuhira H
Central Research Laboratory Hitachi Ltd.
-
Okuhira Hidekazu
Central Research Laboratory Hitachi Ltd.
-
MITSUI Yasuhiro
Central Research Laboratory, Hitachi Ltd.
-
IRIE Takashi
Central Research Laboratory, Hitachi Ltd.
-
SAIKI Atsushi
Industrial Environment Control Facilities Division, Hitachi Plant Engineering & Construction Co., Lt
-
Mitsui Y
Semiconductor & Integrated Circuits Division Hitachi Ltd.
関連論文
- Residual Strain and Crystal Structure of BaTiO_3-SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- Nitrogen Distribution and Chemical Bonding State Analyses in Oxynitride Film by Spatially Resolved Electron Energy Loss Spectroscopy (EELS)
- Two-Dimensional Boron Analysis in Borophosphosilicate Glass Film Using Transmission Electron Microscope with Imaging Filter
- Photo-CVD SiN Assisted Self-Aligned Metal Contact Technology for High-Speed GaAs Devices:--Recess Gate Structure with High Breakdown Voltage for GaAs FETs-- : Semiconductors and Semiconductor Devices
- The Effect of Isopropyl Alcohol Adsorption on the Electrical Characteristics of Thin Oxide
- The Effect of IPA Adsorption on Thin Oxide
- Quantitative Analysis of Trace Water in Monosilane Gas Using Atmospheric-Pressure Ionization Mass Spectrometer with Bicompartment Ion Source
- Quantitative Analysis of Trace Water in Highly Puified Nitrogen Gas by Atmospheric Pressure Ionization Mass Spectrometer
- A New Atmospheric Pressure Ionization Mass Spectrometer for the Analysis of Trace Gas Impurities in Silicon Source Gases used for Semiconductor Fabrication
- Quantitative Analysis of Trace Hydrogen in Highly Purified Nitrogen Gas Using Rapid Reactions in Atmospheric Pressure Ionization Mass Spectrometer
- A Drift Tube for Monitoring ppb Trace Water