Photo-CVD SiN Assisted Self-Aligned Metal Contact Technology for High-Speed GaAs Devices:--Recess Gate Structure with High Breakdown Voltage for GaAs FETs-- : Semiconductors and Semiconductor Devices

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-04-20

著者

• Usagawa Toshiyuki

  Central Research Laboratory Hitachi Ltd.

• Okuhira Hidekazu

  Central Research Laboratory Hitachi Ltd.

関連論文

• Photo-CVD SiN Assisted Self-Aligned Metal Contact Technology for High-Speed GaAs Devices:--Recess Gate Structure with High Breakdown Voltage for GaAs FETs-- : Semiconductors and Semiconductor Devices
• Robust Quantum Levels for Electrons and Holes in n-Al_xGa_As/u-GaAs/u-Al_xGa_As Modulation-Doped Corrugated Double Heterojunctions
• Quantitative Analysis of Trace Hydrogen in Highly Purified Nitrogen Gas Using Rapid Reactions in Atmospheric Pressure Ionization Mass Spectrometer
• On the Determination of the Specific Contact Resistance of Alloyed Contacts to n-GaAs
• A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure
• One-Dimensional Quantum Electron and Hole States in n-Al_xGa_As/u-GaAs/u-Al_xGa_As Corrugated Double-Heterojunctions
• Robust Quantum Levels in n-Al_xGa_As/u-GaAs/u-Al_xGa_As Modulation-looped Corrugated Double Heterojunctions

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