Robust Quantum Levels in n-Al_xGa_<1-x>As/u-GaAs/u-Al_xGa_<1-x>As Modulation-looped Corrugated Double Heterojunctions

スポンサーリンク

概要

• 論文の詳細を見る

• Extremely robust quasi-one-dimensional quantum states are formed in the modulation-doped n-Al_xGa_<1-x>As/u-GaAs/u-Al_xGa_<1-x>As double-heterostructure with interfaces corrugated by periodical bending, Electrons accumulate strongly in a very narrow channel at the convex corner of GaAs region at the u-GaAs/n-Al_xGa_<1-x>As interface. Wave functions for holes are limited to a very narrow channel near the convex corner of the same GaAs region at the opposite interface, u-GaAs/u-Al_xGa_<1-x>As. The energy levels of the quasi-one-dimensional states are found to be insensitive to the variation of the well width d of u-GaAs at least wider than 90 Å. Furthermore,the energy level spacing is large, and electrons and holes wave functions are spatially separated from eacn other.

• 社団法人応用物理学会の論文
• 1997-01-15

著者

• Usagawa Toshiyuki

  Central Research Laboratory Hitachi Ltd.

• Vacek K

  Central Research Laboratory Hitachi Ltd.

• Vacek Karel

  Central Research Laboratory Hitachi Ltd.

関連論文

• Photo-CVD SiN Assisted Self-Aligned Metal Contact Technology for High-Speed GaAs Devices:--Recess Gate Structure with High Breakdown Voltage for GaAs FETs-- : Semiconductors and Semiconductor Devices
• Robust Quantum Levels for Electrons and Holes in n-Al_xGa_As/u-GaAs/u-Al_xGa_As Modulation-Doped Corrugated Double Heterojunctions
• On the Determination of the Specific Contact Resistance of Alloyed Contacts to n-GaAs
• A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure
• One-Dimensional Quantum Electron and Hole States in n-Al_xGa_As/u-GaAs/u-Al_xGa_As Corrugated Double-Heterojunctions
• Robust Quantum Levels in n-Al_xGa_As/u-GaAs/u-Al_xGa_As Modulation-looped Corrugated Double Heterojunctions

スポンサーリンク