One-Dimensional Quantum Electron and Hole States in n-Al_xGa_<1-x>As/u-GaAs/u-Al_xGa_<1-x>As Corrugated Double-Heterojunctions
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概要
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Quasi-one-dimensional quantum electron and hole states are suggested in modulation-doped n-Al_xGa_<1-x>As/u-GaAs/u-Al_xGa_<1-x>As corrugated double heterojunctions. The interfaces between n-Al_xGa_<1-x>As/u-GaAs and u-GaAs/u-Al_xGa_<1-x>As are saw-tooth corrugated by bends with period 850Å and bending angle 90°. The thickness of the sandwiched GaAs layer is 150Å. Quantum-mechanical simulations are performed for electrons and holes. The electrons are found to be densely packed in quasi-one-dimensional states located in the convex corner of the GaAs layer near the doped layer of n-Al_xGa_<1-x>As. The hole states are also quasi-one-dimensional and are located in the convex corner of the GaAs layer near the undoped layer of u-Al_xGa_<1-x>As. Consequently, spatial separation of ground level electron and hole quantum states can be achieved.
- 社団法人応用物理学会の論文
- 1995-08-30
著者
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Usagawa Toshiyuki
Central Research Laboratory Hitachi Ltd.
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Vacek K
Department Of Applied Physics Osaka University
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Vacek Karel
Central Research Laboratory Hitachi Ltd.
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