A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure

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概要

• 論文の詳細を見る

• A new two-dimensional electron gas (2DEG) field-effect transistor (FET) which operates in an MOS transistor-like mode is fabricated on undoped AlGaAs-GaAs heterostructures grown by both molecular beam epitaxy and organometallic vapour phase epitaxy. This device with very simple structure is expected to have performance comparable to those of selectively doped heterostructure FETs and can easily be integrated.

• 社団法人応用物理学会の論文
• 1984-03-20

著者

• Ono Y

  Tohoku Univ. Sendai

• MISHIMA Tomoyoshi

  Central Research Laboratory, Hitachi, Ltd.

• Usagawa Toshiyuki

  Central Research Laboratory Hitachi Ltd.

• KATAYAMA Yoshifumi

  Central Research Laboratory, Hitachi Ltd.

• SHIRAKI Yasuhiro

  Central Research Laboratory,Hitachi Ltd.

• Shiraki Yasuhiro

  Central Research Laboratory Hitachi Ltd.

• Ono Y

  Central Research Laboratory Hitachi Ltd

• Ueyanagi Kiichi

  Central Research Laboratory Hitachi Ltd.

• MORIOKA Makoto

  Central Research Laboratory, Hitachi, Ltd.

• SAWADA Yasushi

  Central Research Laboratory, Hitachi, Ltd.

• ONO Yuichi

  Central Research Laboratory, Hitachi, Ltd.

• Sawada Yasushi

  Central Research Laboratory Hitachi Ltd.

• Morioka Makoto

  Central Research Laboratory Hitachi Ltd.

• Mishima Tomoyoshi

  Central Research Lab. Hitachi Ltd.

• Katayama Yoshifumi

  Central Research Laboratory

• Ono Yuichi

  Central Research Laboratory Hitachi Ltd.

• Shiraki Yasuhiro

  Central Research Laboratory

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• Enhanced Electron Mobility in the Inverted High Electron Mobility Transistor Structure by Two-Step Molecular Beam Epitaxy (MBE) Growth
• Single and Double δ-Doped Al_Ga_As/In_Ga_As Pseudomorphic Heterostructures Grown by Molecular-Beam Epitaxy
• Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure
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