High Breakdown Voltage InAlAs/InGaAs High Electron Mobility Transistors on GaAs with Wide Recess Structure
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概要
- 論文の詳細を見る
Both ant off-state breakdown voltage between a gate and a drain (BV_<gd>) and maximum frequency of oscillation (f_<max>) are described as functions of the width of gate recess in an InAlAs/InGaAs high electron mobility transistor (HEMT), using a new analysis model. The model suggests that the wide recess structure can improve both BV_<gd> and f_<max>, which is experimentally confirmed. We fabricated InAlAs/InGaAs HEMTs lattice-mismatched to GaAs substrates with optimum recess width, and these exhibited both a high BV_<gd> of 14 V and a high f_<max> of 127 GHz at a gate length of 0.66 μm.
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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Higuchi Katsuhiko
Central Research Lab. Hitachi Ltd.
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Mishima Tomoyoshi
Central Research Lab. Hitachi Ltd.
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Matsumoto Hidetoshi
Central Research Lab. Hitachi Ltd.
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Nakamura Tohru
Central Research Lab. Hitachi Ltd.
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