Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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OUCHI Kiyoshi
Central Research Laboratory, Hitachi, Ltd.
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MISHIMA Tomoyoshi
Central Research Laboratory, Hitachi, Ltd.
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Oka Tohru
Central Research Laboratory Hitachi Ltd.
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Ouchi Kiyoshi
Central Research Laboratory Hitachi Ltd.
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MOCHIZUKI Kazuhiro
Central Research Laboratory, Hitachi Ltd.
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TANOUE Tomonori
Central Research Laboratory, Hitachi, Ltd.
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Tanoue T
Central Research Laboratory Hitachi Ltd.
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Tanoue Tomonori
Central Research Laboratory Hitachi Ltd.
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Mochizuki K
Central Research Laboratory Hitachi Ltd.
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Mochizuki Kazuhiro
Central Research Lab.hitachi Ltd.
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Mishima T
Central Research Laboratory Hitachi Ltd.
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Mishima Tomoyoshi
Central Research Lab. Hitachi Ltd.
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