Oka Tohru | Central Research Laboratory Hitachi Ltd.
スポンサーリンク
概要
関連著者
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OUCHI Kiyoshi
Central Research Laboratory, Hitachi, Ltd.
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Oka Tohru
Central Research Laboratory Hitachi Ltd.
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Ouchi Kiyoshi
Central Research Laboratory Hitachi Ltd.
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MOCHIZUKI Kazuhiro
Central Research Laboratory, Hitachi Ltd.
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Mochizuki K
Central Research Laboratory Hitachi Ltd.
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Mochizuki Kazuhiro
Central Research Lab.hitachi Ltd.
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TANOUE Tomonori
Central Research Laboratory, Hitachi, Ltd.
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Tanoue T
Central Research Laboratory Hitachi Ltd.
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Tanoue Tomonori
Central Research Laboratory Hitachi Ltd.
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Nakamura T
National Defense Acad. Kanagawa Jpn
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NIKI Toshikazu
Ishikawa Seisakusho, Ltd.
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Nakamura Takanori
Functional Materials Research Dept. R & D Div. Murata Manufacturing Co. Ltd.
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MISHIMA Tomoyoshi
Central Research Laboratory, Hitachi, Ltd.
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NAKAMURA Tohru
Central Research Laboratory, Hitachi, Ltd.
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Nakamura T
Department Of Earth And Ocean Sciences National Defense Academy
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Niki Toshikazu
Ishikawa Seisakusho Ltd.
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Mishima T
Central Research Laboratory Hitachi Ltd.
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Mishima Tomoyoshi
Central Research Lab. Hitachi Ltd.
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Nakamura Tohru
Central Research Lab. Hitachi Ltd.
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MASUDA Hiroshi
Toei Kogyo Ltd.
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Oka T
Nagaoka Coll. Technol. Niigata Jpn
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MASUDA Hiroshi
Central Research Laboratory, Hitachi, Ltd.
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TERANO Akihisa
Central Research Laboratory, Hitachi, Ltd.
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SUZUKI Hideyuki
Central Research Laboratory, Hitachi, Ltd.
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WATANABE Koichi
Central Research Laboratory, Hitachi, Ltd.
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MATSUBARA Hirokazu
Central Research Laboratory, Hitachi, Ltd.
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Terano Akihisa
Central Research Laboratory Hitachi Ltd.
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Masuda H
Toei Kogyo Ltd.
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Suzuki Hideyuki
Central Research Laboratory Hitachi Ltd.
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Watanabe Koichi
Central Research Laboratory Hitachi Ltd.
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Masuda Hiroshi
Central Research Laboratory Hitachi Ltd.
著作論文
- Characterization of InGaP/GaAs Heterojunction Bipolar Transistors with a Heavily Doped Base : Semiconductors
- High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
- A WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Speed and Low-Power InGaP/GaAs HBTs
- Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors
- New Technologies of a WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Performance InGaP/GaAs HBTs