Oka Tohru | Central Research Laboratory Hitachi Ltd.
スポンサーリンク
概要
関連著者
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OUCHI Kiyoshi
Central Research Laboratory, Hitachi, Ltd.
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Oka Tohru
Central Research Laboratory Hitachi Ltd.
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Ouchi Kiyoshi
Central Research Laboratory Hitachi Ltd.
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MOCHIZUKI Kazuhiro
Central Research Laboratory, Hitachi Ltd.
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Mochizuki K
Central Research Laboratory Hitachi Ltd.
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Mochizuki Kazuhiro
Central Research Lab.hitachi Ltd.
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TANOUE Tomonori
Central Research Laboratory, Hitachi, Ltd.
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Tanoue T
Central Research Laboratory Hitachi Ltd.
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Tanoue Tomonori
Central Research Laboratory Hitachi Ltd.
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Nakamura T
National Defense Acad. Kanagawa Jpn
著作論文
- Characterization of InGaP/GaAs Heterojunction Bipolar Transistors with a Heavily Doped Base : Semiconductors
- High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
- A WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Speed and Low-Power InGaP/GaAs HBTs
- Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors
- New Technologies of a WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Performance InGaP/GaAs HBTs