A WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Speed and Low-Power InGaP/GaAs HBTs

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-03-30

著者

• Nakamura T

  National Defense Acad. Kanagawa Jpn

• NIKI Toshikazu

  Ishikawa Seisakusho, Ltd.

• Nakamura Takanori

  Functional Materials Research Dept. R & D Div. Murata Manufacturing Co. Ltd.

• OUCHI Kiyoshi

  Central Research Laboratory, Hitachi, Ltd.

• NAKAMURA Tohru

  Central Research Laboratory, Hitachi, Ltd.

• Nakamura T

  Department Of Earth And Ocean Sciences National Defense Academy

• Oka Tohru

  Central Research Laboratory Hitachi Ltd.

• Ouchi Kiyoshi

  Central Research Laboratory Hitachi Ltd.

• Niki Toshikazu

  Ishikawa Seisakusho Ltd.

• MOCHIZUKI Kazuhiro

  Central Research Laboratory, Hitachi Ltd.

• Mochizuki K

  Central Research Laboratory Hitachi Ltd.

• Mochizuki Kazuhiro

  Central Research Lab.hitachi Ltd.

• Nakamura Tohru

  Central Research Lab. Hitachi Ltd.

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