Ouchi Kiyoshi | Central Research Laboratory Hitachi Ltd.

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概要

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著作論文

Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates
Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In_Al_As/In_Ga_As/InAsP High-Electron-Mobility Structures on GaAs Substrates
Ultrashallow Junction Formation for Sub-100nm Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Controlling Transient Enhanced Diffusion
Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 μm CMOS and Beyond
Characterization of InGaP/GaAs Heterojunction Bipolar Transistors with a Heavily Doped Base : Semiconductors
High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs (Special Issue on Ultra-High-Speed IC and LSI Technology)
Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
A WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Speed and Low-Power InGaP/GaAs HBTs
Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors
New Technologies of a WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Performance InGaP/GaAs HBTs
Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates

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