Nakamura Tohru | Central Research Lab. Hitachi Ltd.
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概要
関連著者
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Nakamura Tohru
Central Research Lab. Hitachi Ltd.
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NAKAMURA Tohru
Central Research Laboratory, Hitachi, Ltd.
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Kiyota Yukihiro
Central Research Laboratory, Hitachi Ltd.
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Kiyota Yukihiro
Central Research Laboratory Hitachi Ltd.
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Kiyota Yukihiro
Central Research Laboratory Hitachi
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Nakamura Tetsuro
Department Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Nakamura Toshihiko
Faculty Of Engineering Tokyo Institute Of Technology
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Nakamura T
Fujitsr Ltd. Akiruno-shi Jpn
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WASHIO Katsuyoshi
Central Research Laboratory, Hitachi, Ltd.
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Washio K
Central Research Laboratory Hitachi Ltd.
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Washio Katsuyoshi
Central Research Laboratory Hitachi Ltd.
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INADA Taroh
College of Engineering, Hosei University
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Inada Taroh
College Of Engineering Hosei University
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Mochizuki Kazuhiro
Central Research Lab.hitachi Ltd.
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内野 俊
筑波大物質工
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Nakamura T
Hokkaido Univ. Sapporo Jpn
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Nakamura T
National Defense Acad. Kanagawa Jpn
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内野 俊
筑波大・物質工
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NIKI Toshikazu
Ishikawa Seisakusho, Ltd.
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Nakamura Takanori
Functional Materials Research Dept. R & D Div. Murata Manufacturing Co. Ltd.
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OUCHI Kiyoshi
Central Research Laboratory, Hitachi, Ltd.
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ONAI Takahiro
Central Research Laboratory, Hitachi, Ltd.
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SHIMAMOTO Hiromi
Musashino Office, Hitachi Device Engineering, Co., Ltd.
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Uchino Takashi
Central Research Laboratory, Hitachi Ltd.
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Nakamura T
Department Of Earth And Ocean Sciences National Defense Academy
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Uchino T
Hitachi Ltd. Tokyo Jpn
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Shimamoto H
Musashino Office Hitachi Device Engineering Co. Ltd.
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Shimamoto Hiromi
Musashino Office Hitachi Device Engineering Co. Ltd.
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Onai T
Central Research Laboratory Hitachi Ltd.
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Onai Takahiro
Central Research Laboratory Hitachi Ltd.
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Oka Tohru
Central Research Laboratory Hitachi Ltd.
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Ouchi Kiyoshi
Central Research Laboratory Hitachi Ltd.
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Niki Toshikazu
Ishikawa Seisakusho Ltd.
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MOCHIZUKI Kazuhiro
Central Research Laboratory, Hitachi Ltd.
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Mochizuki K
Central Research Laboratory Hitachi Ltd.
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Matsumoto Hidetoshi
Central Research Lab. Hitachi Ltd.
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Nakamura Tohru
Central Research Laboratory Hitachi Ltd.
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Uchino Takashi
Institute Of Materials Science University Of Tsukuba
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Uchino Takashi
Central Research Laboratory Hitachi Ltd.
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内野 俊
Central Research Laboratory Hitachi Ltd.
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TANAKA Satoshi
Central Research Laboratory, Hitachi Ltd.
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SUZUKI Seiji
明海大学歯学部口腔外科学第2講座
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Nakamura Tomohiko
The Institute Of Scientific And Industrial Research Osaka University
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TANIMOTO Takuma
Central Research Laboratory, Hitachi, Ltd.
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OHBU Isao
Central Research Laboratory, Hitachi, Ltd.
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Homma Noriyuki
Hosei University
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Homma Noriyuki
College of Engineering, Hosei University
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Nakamura Takuya
The Faculty Of Engineering Saitama University
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Nakamura Tetsuro
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
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TANABE Masamichi
Musashino Office, Hitachi Device Engineering, Co., Ltd.
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Shiba Takeo
Central Research Laboratory, Hitachi Ltd.
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Shiba Takeo
Central Research Laboratory Hitachi Ltd.
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Tanabe Masamichi
Musashino Office Hitachi Device Engineering Co. Ltd.
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Suzuki S
Materials Science & Advanced Devices Nhk Science & Technical Research Laboratories
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Oka T
Nagaoka Coll. Technol. Niigata Jpn
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Ohbu Isao
Central Research Laboratory Hitachi Ltd.
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Matsumoto Hidetoshi
Central Research Laboratory, Hitachi, Ltd.
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TERANO Akihisa
Central Research Laboratory, Hitachi, Ltd.
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Terano Akihisa
Central Research Laboratory Hitachi Ltd.
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SUZUKI Seiji
College of Engineering, Hosei University
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MURAKI Kazuhiko
College of Engineering, Hosei University
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NIWAYAMA Hideki
College of Engineering, Hosei University
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Niwayama Hideki
College Of Engineering Hosei University
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Suzuki S
明海大学歯学部口腔外科学第2講座
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Muraki K
Yamaguchi Prefecture Central Hospital Hofu Jpn
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Higuchi Katsuhiko
Central Research Lab. Hitachi Ltd.
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Mishima Tomoyoshi
Central Research Lab. Hitachi Ltd.
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Tanimoto Takuma
Central Research Laboratory Hitachi Ltd.
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Tanaka Satoshi
Central Research Laboratory Hitachi Ltd.
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TANAKA Satoshi
Central Research Laboratories, Sysmex Corporation
著作論文
- Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors (Special Issue on Microelectronic Test Structure)
- Process and Device Technologies for High Speed Self-Aligned Bipolar Transistors
- High-Speed High-Density Self-Aligned PNP Technology for Low-Power Complementary Bipolar ULSIs
- A WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Speed and Low-Power InGaP/GaAs HBTs
- New Technologies of a WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Performance InGaP/GaAs HBTs
- Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications (Special Issue on Ultra-High-Speed LSIs)
- Behavior of Active and Inactive Boron in Si Produced by Vapor-Phase Doping during Subsequent Hydrogen Annealing
- Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD) (Special Issue on Quarter Micron Si Device and Process Technologies)
- Single Voltage Supply High Efficiency InGaAs Pseudomorphic Double-Hetero HEMTs with Platinum Buried Gates
- Experimentally Proven Equation for the Collector-Depletion-Layer Transit Time of npn Bipolar Transistors
- High Breakdown Voltage InAlAs/InGaAs High Electron Mobility Transistors on GaAs with Wide Recess Structure