Process and Device Technologies for High Speed Self-Aligned Bipolar Transistors
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概要
- 論文の詳細を見る
Recent high-speed bipolar technologies based on SICOS (Sidewall Base Contact Structure) transistors are reviewed. Bipolar device structures that include polysilicon are key technologies for improving circuit characteristics. As the characteristics of the upward operated SICOS transistors are close to those of downward transistors, they can easily be applied in memory cells which have near-perfect soft-error-immunity. Newly developed process technologies for making shallow base and emitter junctions to improve circuit performance are also reviewed. Finally, complementary bipolar technology for low-power and high-speed circuits using pnp transistors, and a quasi-drift base transistor structure suitable for below 0.1μm emitters are discussed.
- 社団法人電子情報通信学会の論文
- 1995-09-25
著者
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内野 俊
筑波大物質工
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内野 俊
筑波大・物質工
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Homma Noriyuki
Hosei University
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Homma Noriyuki
College of Engineering, Hosei University
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ONAI Takahiro
Central Research Laboratory, Hitachi, Ltd.
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Nakamura T
Fujitsr Ltd. Akiruno-shi Jpn
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WASHIO Katsuyoshi
Central Research Laboratory, Hitachi, Ltd.
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NAKAMURA Tohru
Central Research Laboratory, Hitachi, Ltd.
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Shiba Takeo
Central Research Laboratory, Hitachi Ltd.
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Uchino Takashi
Central Research Laboratory, Hitachi Ltd.
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Kiyota Yukihiro
Central Research Laboratory, Hitachi Ltd.
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Shiba Takeo
Central Research Laboratory Hitachi Ltd.
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Uchino T
Hitachi Ltd. Tokyo Jpn
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Kiyota Yukihiro
Central Research Laboratory Hitachi Ltd.
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Kiyota Yukihiro
Central Research Laboratory Hitachi
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Washio K
Central Research Laboratory Hitachi Ltd.
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Washio Katsuyoshi
Central Research Laboratory Hitachi Ltd.
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Onai T
Central Research Laboratory Hitachi Ltd.
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Onai Takahiro
Central Research Laboratory Hitachi Ltd.
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Nakamura Tohru
Central Research Lab. Hitachi Ltd.
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Uchino Takashi
Institute Of Materials Science University Of Tsukuba
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Uchino Takashi
Central Research Laboratory Hitachi Ltd.
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内野 俊
Central Research Laboratory Hitachi Ltd.
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