HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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SHIMAMOTO Hiromi
Musashino Office, Hitachi Device Engineering, Co., Ltd.
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WASHIO Katsuyoshi
Central Research Laboratory, Hitachi, Ltd.
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Kiyota Yukihiro
Central Research Laboratory, Hitachi Ltd.
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Kiyota Yukihiro
Central Research Laboratory Hitachi Ltd.
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Kiyota Yukihiro
Central Research Laboratory Hitachi
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Shimamoto H
Musashino Office Hitachi Device Engineering Co. Ltd.
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Shimamoto Hiromi
Musashino Office Hitachi Device Engineering Co. Ltd.
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Washio K
Central Research Laboratory Hitachi Ltd.
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Washio Katsuyoshi
Central Research Laboratory Hitachi Ltd.
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OHUE Eiji
Central Research Laboratory, Hitachi, Ltd.
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Hashimoto Takashi
Device Development Center, Hitachi, Ltd.
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UDO Tsutomu
Hitachi ULSI Systems Co., Ltd.
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KODAMA Akihiro
Musashino Office, Hitachi Device Engineering Co., Ltd.
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HAYAMI Reiko
Central Research Laboratory, Hitachi, Ltd.
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Ohue Eiji
Central Research Laboratory Hitachi Ltd.
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Udo Tsutomu
Hitachi Ulsi Systems Co. Ltd.
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Hayami Reiko
Central Research Laboratory Hitachi Ltd.
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Kodama Akihiro
Musashino Office Hitachi Device Engineering Co. Ltd.
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Ohue E
Central Research Laboratory Hitachi Ltd.
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Hashimoto Takashi
Device Development Center Hitachi Ltd.
関連論文
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- HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production
- DC and AC Performances in Selectively Grown SiGe-Base HBTs (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Low-Temperature Electrical Characteristics of Strained-Si-MOSFETs
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- Sticking Configuration of Boron Atoms from B2H6 on Silicon during Rapid Vapor-Phase Doping
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- New Test Structures for Evaluating the Scaling Limit of a Narrow U-Groove Isolation Structure (Special Issue on Microelectronic Test Structures)
- Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs
- Low-Temperature Electrical Characteristics of Strained-Si MOSFETs
- Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs