Kiyota Yukihiro | Central Research Laboratory Hitachi

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概要

• KIYOTA Yukihiroの詳細を見る
• 同名の論文著者
• Central Research Laboratory Hitachiの論文著者

関連著者

• Kiyota Yukihiro

  Central Research Laboratory, Hitachi Ltd.

• Kiyota Yukihiro

  Central Research Laboratory Hitachi

• INADA Taroh

  College of Engineering, Hosei University

• Inada Taroh

  College Of Engineering Hosei University

• Kiyota Yukihiro

  Central Research Laboratory Hitachi Ltd.

• WASHIO Katsuyoshi

  Central Research Laboratory, Hitachi, Ltd.

• NAKAMURA Tohru

  Central Research Laboratory, Hitachi, Ltd.

• Washio K

  Central Research Laboratory Hitachi Ltd.

• Washio Katsuyoshi

  Central Research Laboratory Hitachi Ltd.

• Nakamura Tohru

  Central Research Lab. Hitachi Ltd.

• Nakamura Tetsuro

  Department Of Electrical Engineering And Electronics Toyohashi University Of Technology

• Nakamura Toshihiko

  Faculty Of Engineering Tokyo Institute Of Technology

• SUZUKI Seiji

  明海大学歯学部口腔外科学第2講座

• Kikuchi Tsuneo

  Nmij Aist

• Nakamura T

  Hokkaido Univ. Sapporo Jpn

• Kiyota Y

  Central Research Laboratory Hitachi Ltd.

• Suzuki S

  Materials Science & Advanced Devices Nhk Science & Technical Research Laboratories

• Kikuchi T

  Graduate School Of Engineering Science Osaka University:core Research For Evolutional Science &

• SUZUKI Seiji

  College of Engineering, Hosei University

• KIKUCHI Toshiyuki

  Device Development Center, Hitachi Ltd.

• Suzuki S

  明海大学歯学部口腔外科学第2講座

• 内野 俊

  筑波大物質工

• 内野 俊

  筑波大・物質工

• Nakamura Tomohiko

  The Institute Of Scientific And Industrial Research Osaka University

• Homma Noriyuki

  Hosei University

• Homma Noriyuki

  College of Engineering, Hosei University

• ONAI Takahiro

  Central Research Laboratory, Hitachi, Ltd.

• Nakamura Takuya

  The Faculty Of Engineering Saitama University

• Nakamura Tetsuro

  School Of Electrical Engineering And Electronics Toyohashi University Of Technology

• Nakamura T

  Fujitsr Ltd. Akiruno-shi Jpn

• SHIMAMOTO Hiromi

  Musashino Office, Hitachi Device Engineering, Co., Ltd.

• Shiba Takeo

  Central Research Laboratory, Hitachi Ltd.

• Uchino Takashi

  Central Research Laboratory, Hitachi Ltd.

• Shiba Takeo

  Central Research Laboratory Hitachi Ltd.

• Uchino T

  Hitachi Ltd. Tokyo Jpn

• Shimamoto H

  Musashino Office Hitachi Device Engineering Co. Ltd.

• Shimamoto Hiromi

  Musashino Office Hitachi Device Engineering Co. Ltd.

• Onai T

  Central Research Laboratory Hitachi Ltd.

• Onai Takahiro

  Central Research Laboratory Hitachi Ltd.

• OHUE Eiji

  Central Research Laboratory, Hitachi, Ltd.

• Hashimoto Takashi

  Device Development Center, Hitachi, Ltd.

• UDO Tsutomu

  Hitachi ULSI Systems Co., Ltd.

• KODAMA Akihiro

  Musashino Office, Hitachi Device Engineering Co., Ltd.

• HAYAMI Reiko

  Central Research Laboratory, Hitachi, Ltd.

• Ohue Eiji

  Central Research Laboratory Hitachi Ltd.

• Udo Tsutomu

  Hitachi Ulsi Systems Co. Ltd.

• Hayami Reiko

  Central Research Laboratory Hitachi Ltd.

• Kodama Akihiro

  Musashino Office Hitachi Device Engineering Co. Ltd.

• TANAKA Hideaki

  College of Engineering, Hosei university

• MURAKI Kazuhiko

  College of Engineering, Hosei University

• NIWAYAMA Hideki

  College of Engineering, Hosei University

• Niwayama Hideki

  College Of Engineering Hosei University

• Muraki K

  Yamaguchi Prefecture Central Hospital Hofu Jpn

• Ohue E

  Central Research Laboratory Hitachi Ltd.

• Uchino Takashi

  Institute Of Materials Science University Of Tsukuba

• Uchino Takashi

  Central Research Laboratory Hitachi Ltd.

• Tanaka Hideaki

  College Of Engineering Hosei University

• 内野 俊

  Central Research Laboratory Hitachi Ltd.

• Hashimoto Takashi

  Device Development Center Hitachi Ltd.

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著作論文

• Process and Device Technologies for High Speed Self-Aligned Bipolar Transistors
• The Role of Hydrogen during Rapid Vapor-Phase Doping Analyzed by FTIR-ATR
• Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications (Special Issue on Ultra-High-Speed LSIs)
• Reduction of Base Resistance and Increase in Cutoff Frequency of Si Bipolar Transistor Using Rapid Vapor-Phase Doping
• Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping
• HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production
• Sticking Configuration of Boron Atoms from B2H6 on Silicon during Rapid Vapor-Phase Doping
• Behavior of Active and Inactive Boron in Si Produced by Vapor-Phase Doping during Subsequent Hydrogen Annealing
• Subquarter-Micrometer PMOSFET's with 50-nm Source and Drain Formed by Rapid Vapor-Phase Doping (RVD) (Special Issue on Quarter Micron Si Device and Process Technologies)

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