Washio Katsuyoshi | Central Research Laboratory Hitachi Ltd.

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著作論文

Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors (Special Issue on Microelectronic Test Structure)
Process and Device Technologies for High Speed Self-Aligned Bipolar Transistors
High-Speed High-Density Self-Aligned PNP Technology for Low-Power Complementary Bipolar ULSIs
High-Frequency, Low-Noise Si Bipolar Transistor Fabricated Using Self-Aligned Metal/IDP Technology (Special Issue on High-Frequency/speed Devices in the 21st Century)
Reduction of Base Resistance and Increase in Cutoff Frequency of Si Bipolar Transistor Using Rapid Vapor-Phase Doping
Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping
HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production
DC and AC Performances in Selectively Grown SiGe-Base HBTs (Special Issue on High-Frequency/speed Devices in the 21st Century)
Novel SiGe-on-Insulator Virtual Substrate Fabricated by Self-Melt-Solidification
Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs
Low-Temperature Electrical Characteristics of Strained-Si MOSFETs
Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs

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