High-Frequency, Low-Noise Si Bipolar Transistor Fabricated Using Self-Aligned Metal/IDP Technology (Special Issue on High-Frequency/speed Devices in the 21st Century)
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概要
- 論文の詳細を見る
A high-frequency, low-noise silcon bipolar transistor that can be used in over-10 Gb/s optical communication systems and wireless communication systems has been developed. The silicon bipolar transistor was fabricated using self-aligned base electrode of stacked layers of metal and in-situ doped poly-Si (IDP) by low-temperature selective tungsten CVD. It provides a low base resistance and high-cutoff frequency. The base resistance is reduced to half that of a transistor with a conventional poly-Si base electrode. By using the SMI technology and optimizing the depth of the emitter and the link base, we achieved the maximum oscillation frequency of 80 GHz, a minimum gate delay in an ECL of 11.6 ps, and the minimum noise figure of 0.34 dB at 2 GHz, which are the highest performances among those obtained from ion-implanted base Si bipolar transistors, and are comparable to those of SiGe base heterojunction bipolar transistors.
- 社団法人電子情報通信学会の論文
- 1999-11-25
著者
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ONAI Takahiro
Central Research Laboratory, Hitachi, Ltd.
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SHIMAMOTO Hiromi
Musashino Office, Hitachi Device Engineering, Co., Ltd.
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TANABE Masamichi
Musashino Office, Hitachi Device Engineering, Co., Ltd.
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WASHIO Katsuyoshi
Central Research Laboratory, Hitachi, Ltd.
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Shimamoto H
Musashino Office Hitachi Device Engineering Co. Ltd.
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Shimamoto Hiromi
Musashino Office Hitachi Device Engineering Co. Ltd.
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Tanabe Masamichi
Musashino Office Hitachi Device Engineering Co. Ltd.
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Washio K
Central Research Laboratory Hitachi Ltd.
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Washio Katsuyoshi
Central Research Laboratory Hitachi Ltd.
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Onai T
Central Research Laboratory Hitachi Ltd.
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Onai Takahiro
Central Research Laboratory Hitachi Ltd.
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OHUE Eiji
Central Research Laboratory, Hitachi, Ltd.
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Ohue Eiji
Central Research Laboratory Hitachi Ltd.
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Ohue E
Central Research Laboratory Hitachi Ltd.
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