Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs
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概要
- 論文の詳細を見る
The effect of incorporated C on preventing the diffusion of B in selectively grown Si1-x-yGexCy layers has been studied. The diffusivity of B was significantly decreased by increasing the C content, even when the concentrations of B were high. Furthermore, self-aligned SiGeC heterojunction bipolar transistors (HBTs) were fabricated, and the effects of incorporating C in the base layer on device performance were evaluated. A shallower base with a higher concentration of B was produced by suppression the B outdiffusion. Consequently, low values for base resistance and a high cutoff frequency of 168 GHz were achieved with a 4-nm-thick p-Si1-x-yGexCy layer where the C content was 0.2% and the B concentration was $1\times 10^{20}$ cm-3.
- 公益社団法人 応用物理学会の論文
- 2003-04-15
著者
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Suzumura Isao
Central Research Laboratory Hitachi Ltd.
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Shimamoto Hiromi
Musashino Office Hitachi Device Engineering Co. Ltd.
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Washio Katsuyoshi
Central Research Laboratory Hitachi Ltd.
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Oda Katsuya
Central Research Laboratory Hitachi Ltd.
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MIURA Makoto
Central Research Laboratory, Hitachi Ltd.
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Ohue Eiji
Central Research Laboratory Hitachi Ltd.
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Hayami Reiko
Central Research Laboratory Hitachi Ltd.
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Kodama Akihiro
Musashino Office Hitachi Device Engineering Co. Ltd.
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Shimamoto Hiromi
Musashino Office, Hitachi Device Engineering, Co. Ltd., Kokubunji, Tokyo, Japan
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