Properties of SiGe Films Fabricated by Reactive Thermal Chemical Vapor Deposition Using Lamp Heating

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概要

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• The structural and electrical properties of SiGe films deposited by reactive thermal chemical vapor deposition using a lamp heating system with a source gas mixture of GeF4 and Si2H6 were investigated. In the SiGe film depositions with respective GeF4 and Si2H6 flow rates of 0.06 and 3 sccm, the film structure changed from crystalline to amorphous during the film growth. The results of secondary ion mass spectroscopy analysis and high-temperature deposition suggest that the gas phase reactions cause the structural change. To suppress the gas phase reactions, low-pressure depositions are investigated. The SiGe film deposited at a relatively low pressure of 400 Pa shows good crystallinity. The thin-film transistor with this SiGe film also reveals a high p-channel mobility of about 10 cm2$\cdot$V-1$\cdot$s-1.

• 2010-04-25

著者

• Suzumura Isao

  Central Research Laboratory Hitachi Ltd.

• Kagatsume Akiko

  Mechanical Engineering Research Laboratory Hitachi Ltd.

• Jun-ichi Hanna

  Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8530, Japan

• Wakagi Masatoshi

  Materials Research Laboratory Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi, Ibaraki 319-1292, Japan

• Haruhiko Asanuma

  Materials Research Laboratory Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi, Ibaraki 319-1292, Japan

• Etsuko Nishimura

  Materials Research Laboratory Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi, Ibaraki 319-1292, Japan

• Mieko Matsumura

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Tsutomu Hosoi

  Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8530, Japan

• Masatoshi Wakagi

  Materials Research Laboratory Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi, Ibaraki 319-1292, Japan

関連論文

• Parameter Optimization of Tersoff Interatomic Potentials Using a Genetic Algorithm
• Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs
• Properties of SiGe Films Fabricated by Reactive Thermal Chemical Vapor Deposition Using Lamp Heating
• Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs
• Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs

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