Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
-
Suzumura Isao
Central Research Laboratory Hitachi Ltd.
-
SHIMAMOTO Hiromi
Musashino Office, Hitachi Device Engineering, Co., Ltd.
-
Shimamoto Hiromi
Musashino Office Hitachi Device Engineering Co. Ltd.
-
Washio K
Musashino Office Hitachi Device Engineering Co. Ltd.
-
Oda Katsuya
Central Research Laboratory Hitachi Ltd.
-
OHUE Eiji
Central Research Laboratory, Hitachi, Ltd.
-
KODAMA Akihiro
Musashino Office, Hitachi Device Engineering Co., Ltd.
-
HAYAMI Reiko
Central Research Laboratory, Hitachi, Ltd.
-
MIURA Makoto
Central Research Laboratory, Hitachi Ltd.
-
WASHIO Katsuyoshi
Musashino Office, Hitachi Device Engineering, Co. Ltd.
関連論文
- Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors (Special Issue on Microelectronic Test Structure)
- High-Speed High-Density Self-Aligned PNP Technology for Low-Power Complementary Bipolar ULSIs
- High-Frequency, Low-Noise Si Bipolar Transistor Fabricated Using Self-Aligned Metal/IDP Technology (Special Issue on High-Frequency/speed Devices in the 21st Century)
- HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production
- DC and AC Performances in Selectively Grown SiGe-Base HBTs (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs
- Properties of SiGe Films Fabricated by Reactive Thermal Chemical Vapor Deposition Using Lamp Heating
- Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs
- Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs