Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors (Special Issue on Microelectronic Test Structure)

概要

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The degradation of I-V characteristics under constant emitter-base reverse voltage stress in advanced self-aligned bipolar transistors was analyzed. Experimental analyses have been taken the stress field effect into account when predicting hot-carrier degradation. These analyses showed that base current starts to increase when the reverse voltage stress is about 3 V. The dependence of the base current change on reverse voltages of more than 3 V was also investigated experimentally, and equations expressing hot-carrier degradation in terms of the exponential dependence of excess base current on both reverse stress voltage and stress-enhancing voltage related to emitter-base breakdown voltage were derived.
社団法人電子情報通信学会の論文
1996-02-25