Low-Temperature Electrical Characteristics of Strained-Si MOSFETs
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概要
- 論文の詳細を見る
The low-temperature electrical characteristics of strained-Si metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated as a step towards determining the mechanisms responsible for the improved mobility of these devices. If the increased mobility is due to a reduction in the inter-valley (-band) phonon scattering, the increase should fall with temperature. We found that the ratios by which both the electron and hole mobility of a strained-Si MOSFET are lower than those for a conventional Si MOSFET do not significantly decrease with temperature. The result indicates that a reduction in average effective mass may make a greater contribution to the improved mobility than the reduction of phonon scattering.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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Washio Katsuyoshi
Central Research Laboratory Hitachi Ltd.
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Sugii Nobuyuki
Central Research Laboratory Hitachi Ltd.
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Sugii Nobuyuki
Central Research Laboratory, Hitachi, Ltd., 1-280, Higachi-koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan
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Washio Katsuyoshi
Central Research Laboratory, Hitachi, Ltd., 1-280, Higachi-koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan
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