Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance(<Special Section>Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)

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概要

• 論文の詳細を見る

• We present C-doped SiGe (SiGe:C) heterojunction bipolar transistor (HBT) devices that exhibit highly efficient and linear power characteristics comparable to those of GaAs HBTs under wide-band code-division multiple-access (WCDMA) modulation. Our devices have a novel resistor inserted in their base bias current pass, which is designe+d to short-circuits DC components of the base current and conducts only envelope frequency signals. The impurity concentration at their emitter-base junctions is reduced by the effect of C doping suppressing B diffusion, and the emitter capacitance is decreased to half that of conventional SiGe HBTs as the result. The combination of these two modifications has significantly reduced the adjacent channel power leakage ratio (ACPR), and the idle current, without degrading power-added-efficiency (PAE). An optimized device with a total emitter area of 3390μm^2 exhibited 48% PAE and 27.4-dBm output power with an ACPR of less than -40dBc at an idle current of 20mA under WCDMA modulation at 1.95GHz and 3.4-V bias voltage.

• 社団法人電子情報通信学会の論文
• 2006-04-01

著者

• WASHIO Katsuyoshi

  Central Research Laboratory, Hitachi, Ltd.

• Washio Katsuyoshi

  Central Research Laboratory Hitachi Ltd.

• KONDO Masao

  Advanced Analog Technology Div., Renesas Technology Corp.

• MIYASHITA Isao

  Process Technology Development Div., Renesas Technology Corp.

• KURAMAOTO Tadashi

  Process Technology Development Div., Renesas Technology Corp.

• KOSHIMIZU Makoto

  Process Technology Development Div., Renesas Technology Corp.

• Miyashita Isao

  Process Technology Development Div. Renesas Technology Corp.

• Koshimizu Makoto

  Process Technology Development Div. Renesas Technology Corp.

• Kuramaoto Tadashi

  Process Technology Development Div. Renesas Technology Corp.

• Kondo Masao

  Advanced Analog Technology Div. Renesas Technology Corp.

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• Reduction of Base Resistance and Increase in Cutoff Frequency of Si Bipolar Transistor Using Rapid Vapor-Phase Doping
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• HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production
• DC and AC Performances in Selectively Grown SiGe-Base HBTs (Special Issue on High-Frequency/speed Devices in the 21st Century)
• Low-Temperature Electrical Characteristics of Strained-Si-MOSFETs
• Novel SiGe-on-Insulator Virtual Substrate Fabricated by Self-Melt-Solidification
• Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
• Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs
• Low-Temperature Electrical Characteristics of Strained-Si MOSFETs
• Suppression of B Outdiffusion by C Incorporation in Ultra-High-Speed SiGeC HBTs

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